|Publication number||US4513684 A|
|Application number||US 06/452,224|
|Publication date||Apr 30, 1985|
|Filing date||Dec 22, 1982|
|Priority date||Dec 22, 1982|
|Also published as||CA1214253A1, EP0118644A1|
|Publication number||06452224, 452224, US 4513684 A, US 4513684A, US-A-4513684, US4513684 A, US4513684A|
|Inventors||Prem Nath, Masatsugu Izu|
|Original Assignee||Energy Conversion Devices, Inc.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (7), Referenced by (12), Classifications (19), Legal Events (9)|
|External Links: USPTO, USPTO Assignment, Espacenet|
The invention relates generally to apparatus for producing improved large area photovoltaic devices either by continuous or batch producing techniques, and more particularly to an upstream cathode system for (1) collecting impurities and contaminants, and (2) initiating the plasma forming and depositing process, whereby a semiconductor film of substantially homogeneous and uniform composition is deposited across the large area surface of the substrate.
This invention relates to apparatus for either (1) continuously producing photovoltaic devices on a substrate by depositing successive semiconductor layers in each of at least two adjacent deposition chambers through which the substrate continually travels, or (2) the batch processing production of photovoltaic devices by depositing successive semiconductor layers in each of at least two unconnected deposition chambers into which the substrate is successively transported. Since the composition of the amorphous semiconductor layers is dependent upon the particular process gases introduced into each of the deposition chambers, even small amounts of impurities or contaminants in the semiconductor layers deleteriously effects the efficiencies of photovoltaic devices produced. Therefore, process gases introduced into the deposition chambers, as well as the cleanliness of the deposition chamber itself, must be carefully controlled. To that end, the deposition chamber is sealed to the atmosphere, pumped to low pressures, heated to high temperatures and flushed with a gas such as hydrogen or argon prior to initiation of the glow discharge deposition process.
In glow discharge deposition techniques currently employed, the process gases are introduced at spaced intervals along one of the sides of the deposition cathode. The process gases are drawn by a vacuum pump across the deposition surface of a substrate where an r.f. powered cathode or a microwave generator creates an electromagnetic field in the region defined between the deposition cathode or microwave generator and the substrate (hereinafter referred to as the "plasma region"). The process gases, upon entering the electromagnetic field are disassociated into a plasma adapted to be deposited onto the exposed surface of the substrate.
However, it has now been determined that the semiconductor material produced adjacent the upstream section of the substrate, that section of the substrate first contacted as the process gases flowing across the deposition surface thereof, exhibits electrically inferior characteristics as compared to the semiconductor material produced over the remainder of the downstream deposition surface of the substrate. The electrically inferior characteristics of the upstream semiconductor material can be attributed, inter alia, to (1) impurities in the process gases initially entering the plasma region of the deposition chamber, (2) contamination from the ambient conditions existing in said deposition chamber when the process gases first contact the energized electromagnetic field, and (3) the changing chemical combinations and bonding formations which are formed as the process gases move across the electromagnetic field.
More particularly, despite efforts to procure "pure" process gases, at least trace amounts of impurities are present. In prior glow discharge deposition apparatus, these impurities were deposited as the process gases contacted the electromagnetic field at the upstream side of the substrate. Further, despite pumping and cleansing efforts, contaminants would outgas from the walls of the deposition chamber when the deposition cathode or microwave generator was powered to create the electromagnetic field. These impurities and contaminants would be deposited on the upstream side of the substrate, thereby contributing to the electrically inferior upstream semiconductor material.
It has also been found that the composition of the semiconductor film deposited onto the substrate in such prior deposition apparatus varies with the length of time the process gases are subject to the effects of the electromagnetic field. In other words, the species and compounds formed when the process gases initially come into contact with and are disassociated by the electromagnetic field vary from the species and compounds deposited onto the substrate at a more downstream location. Although, the precise physical and chemical properties of the species and compounds deposited at the downstream location are currently being investigated and have not as yet been fully identified, it is apparent that they provide superior electrical responses (as compared to the responses of the material deposited at the upstream location).
Whether those improved electrical responses are due to the removal of trace impurities from the process gases, the removal of contaminants outgassed from the walls of the deposition chamber, the formation and breakdown of species and compounds, or a combination of the foregoing, it is clear that the properties exhibited by the material deposited onto the substrate is dependent on the length of time spent in the presence of an electromagnetic field. In other words, the overall electrical properties of semiconductor devices produced from semiconductor layers deposited onto a substrate are superior at the downstream segment of the layered substrate.
Accordingly, it is the principle object of the upstream cathode system of the present invention to create an electromagnetic field upstream of the deposition cathode or microwave generator for (1) collecting impurities from the process gases and contaminants from the walls of the deposition chamber and/or (2) subjecting the process gases to a predeposition electromagnetic field prior to their introduction to the deposition electromagnetic field. In this manner, an improved semiconductor film is deposited onto the substrate, said film being of substantially uniform and homogeneous composition across the surface of the substrate and exhibiting improved photovoltaic characteristics.
Recently, considerable efforts have been made to develop systems for depositing amorphous semiconductor alloys, each of which can encompass relatively large areas and which can be doped to form p-type and n-type materials for the production of p-i-n type devices which are, in operation, substantially equivalent to their crystalline counterparts.
It is now possible to prepare amorphous silicon alloys by glow discharge techniques that have (1) acceptable concentrations of localized states in the energy gaps thereof, and (2) provide high quality electronic properties. This technique is fully described in U.S. Pat. No. 4,226,898, Amorphous Semiconductors Equivalent to Crystalline Semiconductors, Stanford R. Ovshinsky and Arun Madan which issued Oct. 7, 1980 and be vapor deposition as fully described in U.S. Pat. No. 4,217,374, Stanford R. Ovshinsky and Masatsugu Izu, which issued on Aug. 12, 1980, under the same title. As disclosed in these patents, it is believed that fluorine introduced into the amorphous silicon semiconductor operates to substantially reduce the density of the localized states therein and facilitates the addition of other alloying materials, such as germanium.
The concept of utilizing multiple cells, to enhance photovoltaic device efficiency, was discussed at least as early as 1955 by E. D. Jackson, U.S. Pat. No. 2,949,498 issued Aug. 16, 1960. The multiple cell structures therein discussed utilized p-n junction crystalline semiconductor devices. Essentially the concept is directed to utilizing different band gap devices to more efficiently collect various portions of the solar spectrum and to increase open circuit voltage (Voc.). The tandem cell device has two or more cells with the light directed serially through each cell, with a large band gap material followed by smaller band gap materials to absorb the light passed through the first cell. By substantially matching the generated currents from each cell, the overall open circuit voltages may be added, thereby making the greatest use of light energy passing through the cells.
It is of obvious commercial importance to be able to mass produce photovoltaic devices by a continuous process. Unlike crystalline silicon which is limited to batch processing for the manufacture of solar cells, amorphous silicon alloys can be deposited in multiple layers over large area substrates to form solar cells in a high volume, continuous processing system. Continuous processing systems of this kind are disclosed, for example, in pending patent applications: Ser. No. 151,301, filed May 19, 1980 for A Method of Making P-Doped Silicon Films and Devices Made Therefrom, now U.S. Pat. No. 4,400,409; Ser. No. 240,493, filed Mar. 16, 1981 for Continuous Systems For Depositing Amorphous Semiconductor Materials, now U.S. Pat. No. 4,410,558; Ser. No. 306,146, filed Sept. 28, 1981 for Multiple Chamber Deposition and Isolation System and Method, now U.S. Pat. No. 4,438,723; and Ser. No. 359,825, filed Mar. 19, 1982 for Method And Apparatus For Continuously Producing Tandem Amorphous Photovoltaic Cells, now U.S. Pat. No. 4,492,181. As disclosed in these applications, a substrate may be continuously advanced through a succession of deposition chambers, wherein each chamber is dedicated to the deposition of a specific material. In making a solar cell of p-i-n type configuration, the first chamber is dedicated for depositing a p-type amorphous semiconductor layer. The second chamber is dedicated for depositing an intrinsic amorphous semiconductor layer and the third chamber is dedicated for depositing an n-type amorphous semiconductor layer.
Whereas, for purposes of mass production, the succession of depositon chambers described hereinabove, is most advantageously employed, a batch processing system may also be used. In such a batch processing system the amorphous semiconductor allow layers can also be deposited in multiple layers over large area substrates to form photovoltaic devices. Batch processing techniques for producing p-i-n type solar cells may proceed in either of two possible manners: (1) a plurality of interlocked deposition chambers are provided wherein a first chamber deposits a p-type semiconductor layer; a second chamber deposits an intrinsic semiconductor layer; and a third chamber deposits an n-type semiconductor layer; or (2) a single deposition chamber is provided which is flushed after the deposition of each layer. In either case, the batch process techniques are accomplished on individual substrate plates in an intermittent mode of operation.
While both systems, batch and continuous, have their own set of operating problems, they both must be kept free of contaminants, which, if deposited with the semiconductor layers onto the deposition surface of the substrate, would harm if not destroy the efficiency and operation of photovoltaic devices produced therefrom. Accordingly, each system must be careful to control the interior environment of its deposition chambers to prevent the influx of contaminants from external sources. After being exposed to the environment, the chambers are pumped, heated and cleansed in an attempt to remove contaminants such as water vapor from the chamber walls. Further, only the purest process gases are purchased for introduction into the chamber and subsequent deposition onto the substrate surface as semiconductor layers. And finally, both systems produce said semiconductor layers by employing very similar operating parameters such as r.f. or microwave power, pressure, process gas mixture, flow rate, temperature, etc.
It should therefore be obvious to those ordinarily skilled in the art that the upstream cathode system of the present invention is equally well-suited for use with batch processing and continuous production apparatus. With both sets of apparatus, it serves the identical function of creating an electromagnetic field upstream of the deposition cathode for (1) collecting impurities from the process gases and contaminants from the walls of the deposition chamber, and (2) initiating the disassociation of process gases into electrically superior species which, when deposited onto the substrate, are of substantially homogeneous chemical composition.
These and other objects and advantages of the present invention will become clear from the drawings, the claims and the description of the invention which follow.
Disclosed herein is an upstream cathode system adapted to be used with either batch-type or continuous-type glow discharge deposition apparatus in which a semiconductor film is deposited onto the exposed surface of a large area substrate in a glow discharge deposition chamber. In such apparatus, process gases introduced into the deposition chamber are directed across the plasma region thereof. The power source is adapted to develop an electromagnetic field for disassociating the process gases into species and depositing the semiconductor film onto the exposed substrate surface. The upstream cathode system of the present invention is preferably disposed upstream of the deposition cathode or microwave generator for forming an upstream electromagnetic field in the presence of which impurities from the process gases and contaminants from the walls of the deposition chamber are removed and collected, and the process gases begin their disassociation and recombination into species. In this manner, an improved semiconductor film of substantially uniform and homogeneous composition is deposited onto the exposed surface of the substrate in the presence of the downstream electromagnetic field, said film being free of process gas impurities and chamber wall contaminants and having been disassociated and recombined into species which, when deposited, exhibit improved electrical properties.
The upstream cathode system includes (1) either an r.f. powered pre-cathode or an extension of the deposition cathode past which the process gases flow prior to contacting the deposition plasma region and (2) a collection plate disposed adjacent to but spaced from the extension or pre-cathode, whereby the system is adapted to develop an upstream electromagnetic field or plasma region. It is in the presence of this upstream electromagnetic field that impurities from the process gases, contaminants from the chamber walls, and partially disassociated and recombined species collect on a surface of the collection plate.
In the embodiment wherein the upstream cathode system of the present invention is used with a continuously moving substrate, the process gases may either be introduced to flow in a direction transverse to the direction of movement of the substrate, or in the same direction as the direction of substrate movement through the deposition chamber. When the process gases flow in a longitudinal direction across the substrate (in the same direction as the direction of substrate travel), the upstream cathode system is operatively disposed in a manner substantially identical to that previously described for a stationary substrate. In both cases, the precathode and collection plate are substantially equal in length to the width of the substrate. However, when the process gases flow transversely across the substrate (in a direction transverse to direction of substrate movement through the deposition chamber), the collection plate and the precathode are substantially equal in length to the length of the deposition cathode and operatively disposed adjacent thereto.
FIG. 1 is a fragmentary, cross-sectional view of a tandem photovoltaic device comprising a plurality of p-i-n type cells, each layer of the cells formed from a semiconductor alloy;
FIG. 2 is a diagrammatic representation of a multiple glow discharge chamber deposition system adapted for use in the continuous production of photovoltaic devices such as the cells shown in FIG. 1;
FIG. 3 is an enlarged perspective view of the upstream cathode system of the present invention, said upstream cathode system adapted for use with batch-type glow discharge deposition apparatus;
FIG. 4 is a diagrammatic representation of a deposition chamber adapted for use in the batch production of photovoltaic devices, such as the cells shown in FIG. 1;
FIG. 4A is an enlarged, fragmentary perspective view of the upstream cathode system shown in FIG. 3 and illustrating the disposition of said system relative to the deposition cathode, substrate and process gas source in batch-type glow discharge deposition apparatus;
FIG. 5 is an enlarged, fragmentary perspective view of the upstream cathode system of the present invention as modified for operative disposition adjacent the deposition cathode, substrate and process gas inlet in continuous glow discharge deposition apparatus wherein the direction of process gas flow in transverse to the direction of substrate movement; and
FIG. 6 is an enlarged, fragmentary, perspective view of the upstream cathode system of the present invention as modified for operative disposition adjacent the deposition cathode, substrate and process gas inlet in continuous glow discharge deposition apparatus wherein the direction of process gas flow parallels the direction of substrate movement.
I. The Photovoltaic Cell
Referring now to the drawings and particularly to FIG. 1, a photovoltaic cell, formed of a plurality of successive p-i-n layers, each of which includes, preferably, an amorphous semiconductor alloy, is shown generally by the numberal 10. It is for the production of this type of photovoltaic device, wherein amorphous semiconductor layers are continuously deposited onto a substrate in isolated deposition chambers, that the upstream deposition apparatus of the present invention was developed.
More particularly, FIG. 1 shows a p-i-n type photovoltaic device such as a solar cell made up of individual p-i-n type cells 12a, 12b and 12c. Below the lowermost cell 12a is a substrate 11 which may be transparent or formed from a metallic material such as stainless steel, aluminum, tantalum, molybdenum or chrome. Although certain applications may require a thin oxide layer and/or a series of base contacts prior to application of the amorphous material, for purposes of this application, the term "substrate" shall include not only a flexible film, but also any elements added thereto by preliminary processing. Also included within the scope of the present invention are substrates formed of glass or a glass-like material on which an electrically conductive electrode is applied.
Each of the cells 12a, 12b and 12c are preferably fabricated with an amorphous semiconductor body containing at least a silicon alloy. Each of the semiconductor bodies includes an n-type conductivity layer 20a, 20b and 20c; an intrinsic layer 18a, 18b and 18c; and a p-type conductivity layer 16a, 16b and 16c. As illustrated, cell 12b is an intermediate cell and, as indicated in FIG. 1, additional intermediate cells may be stacked atop the illustrated cells without departing from the spirit or scope of the present invention. Also, although p-i-n cells are illustrated, the baffle apparatus of this invention may also be used with apparatus adapted to produce single or multiple n-i-p cells.
It is to be understood that following the deposition of the semiconductor alloy layers, a further deposition process may be either performed in a separate environment or as a part of a continuous process. In this step, a TCO (transparent conductive oxide) layer 22 is added. An electrode grid 24 may be added to the device where the cell is of a sufficiently large area, or if the conductivity of the TCO layer 22 is insufficient. The grid 24 shortens the carrier path and increases the conduction efficiency.
II. The Multiple Glow Discharge Deposition Chambers
Turning now to FIG. 2, a diagrammatic representation of multiple glow discharge chamber deposition apparatus for the continuous production of semiconductor cells is generally illustrated by the reference numberal 26. The apparatus 26 includes a plurality of isolated, dedicated deposition chambers, each chamber of which is interconnected by a gas gate through which (1) sweep gases, (2) process gases, and (3) a web of substrate material are adapted to unidirectionally pass.
The apparatus 26 is adapted to mass produce large area, amorphous semiconductor layers of p-i-n configurations onto the deposition surface of a substrate material 11 which is continually fed therethrough. To deposit the semiconductor layers required for producing multiple p-i-n type cells, the apparatus 26 includes at least one triad of deposition chambers. Each triad of deposition chamber comprises: a first deposition chamber 28 in which a p-type conductivity amorphous semiconductor layer is deposited onto the deposition surface of the substrate 11 as the substrate 11 passes therethrough; a second deposition chamber 30 in which an intrinsic semiconductor layer is deposited atop the p-type layer on the deposition surface of the substrate 11 as the substrate 11 passes therethrough; and a third deposition chamber 32 in which an n-type semiconductor layer is deposited atop the intrinsic layer on the deposition surface of the substrate 11 as the substrate 11 passes therethrough. It should be apparent that (1) although, only one triad of deposition chambers has been illustrated, additional triads or additional individual chambers may be added to the apparatus to provide the machine with the capability of producing photovoltaic cells having any number of amorphous p-i-n type semiconductor layers; (2) the upstream cathode system of the present invention is equally applicable to batch-type production apparatus wherein an isolated chamber includes the necessary elements to deposit a semiconductor layer by glow discharge techniques; (3) the substrate supply core 11a and the substrate take-up core 11b are shown in the deposition chambers for illustrative purposes only, while in reality the cores would be housed in separate chambers operatively connected to the deposition chambers; (4) although the glow discharge illustrated herein employs cathodes with r.f. power, other glow discharge apparatus, such as microwave frequency generators, may be employed without departing from the spirit of the present invention; and (5) the cathodes of the upstream cathode systems of the present invention may enjoy any angular orientation, such as vertical.
Each deposition chamber 28, 30 and 32 of the triad is adapted to deposit a single amorphous semiconductor layer, by glow discharge deposition, onto the electrically conductive substrate 11. To that end, each of the deposition chambers 28, 30 and 32 includes: a cathode 34; a shield 35 disposed about each of the cathodes 34; a process gas supply conduit 36; a radio frequency generator 38; a process gas and plasma evacuation conduit 41; a plurality of transversely extending magnetic elements 50; a plurality of radiant heating elements shown schematically as 40 in FIG. 2; and a gas gate 42 operatively connecting the intrinsic deposition chamber to each of the dopant chambers. Additionally, an inert sweep gas conduit 37 is disposed on opposed sides of the intrinsic deposition chamber.
The supply conduits 36 are operatively associated with the respective cathodes 34 to deliver process gas mixtures to the plasma regions created in each deposition chamber between said cathodes 34 and the substrate 11. The cathode shields 35 are adapted to operate in conjunction with the web of substrate material 11 and the evacuation conduit 41 to substantially confine the plasma within the cathode region of the deposition chambers.
The radio frequency or microwave generators 38 operate in conjunction with the cathodes 34, the radiant heaters 40 and the ground substrate 11 to form the plasma by disassociating the elemental reaction gases entering the deposition chambers into deposition species. The deposition species are then deposited onto the bottom surface of the substrate 11 as amorphous semiconductor layers. The substrate 11 is maintained substantially flat by the plurality of rows of magnetic elements 50 which provide an attractive force urging the substrate upwardly, out of its normal sagging path of travel.
With reference to FIG. 4, apparatus for the batch-type production of photovoltaic cells in a glow discharge deposition chamber is generally illustrated by the reference numeral 60. The apparatus 60, like the apparatus 26 described hereinabove, is adapted to deposit large area amorphous semiconductor layers of p-i-n type configuration onto the surface of substrate material 11a which is stationarily mounted in the deposition chamber 28a. In the deposition chamber 28a a p-type conductivity layer is deposited onto the surface of the substrate 11a as the substrate is transported thereinto; the chamber 28a is then flushed and an intrinsic semiconductor layer is deposited atop the p-type layer; the chamber 28a is again flushed and an n-type semiconductor layer is deposited atop the intrinsic layer.
In order to deposit a single amorphous semiconductor layer, by glow discharge deposition, onto the electrically conductive substrate 11a, the deposition chamber 28a includes: a cathode 34a, a shield 35a, a process gas supply conduit 36a; a radio frequency generator 38a; a process gas and plasma evacuation conduit 41a; and a plurality of radiant heating elements 40a. The operation of the foregoing elements is substantially identical to the operation of the similarly numbered elements in the continuous production system described with respect to FIG. 2 and, therefore, the description need not be repeated herewith. Note, that while, the sweep gas conduits 37 and the gas gates 42 serve no purpose in a batch processing system, the magnetic assemblies 50a are preferably used to prevent the canoeing or warping of large area substrate plates.
To form the photovoltaic cell 10 illustrated in FIG. 1, whether by a batch or continuous process, a p-type amorphous silicon semiconductor layer is deposited onto the substrate 11 in the deposition chamber 28, an intrinsic amorphous silicon semiconductor alloy layer is deposited atop the p-type layer in the deposition chamber 30 and an n-type amorphous silicon semiconductor alloy layer is deposited atop the intrinsic layer in the deposition chamber 32. As a result, in the preferred embodiment, the apparatus 26 deposits at least three amorphous silicon semiconductor alloy layers onto the substrate 11 with the intrinsic layer deposited in deposition chamber 30 differing in composition from the layers deposited in deposition chambers 28 and 32 by the absence of at least one element which will be referred to as the dopant or doping species.
It is important that each of the semiconductor layers and particularly the intrinsic layer deposited onto a surface of the substrate 11 be of high purity in order to produce high efficiency photovoltaic devices 10. It is therefore necessary to prevent the deposition of semiconductor layers which include either impurities from the process gases or contaminants from the walls of the deposition chambers. It is further advantageous not to deposit a film onto the substrate until the plasma contains the chemical combination, composition and bonding characteristics which will deposit a semiconductor layer exhibiting satisfactory electrical properties. It is to the end of satisfying the above criteria that the upstream cathode assembly of the instant invention is directed.
III. The Upstream Cathode System of the Present Invention
The upstream cathode system of the present invention is fully illustrated in FIGS. 3-6. For ease of disclosure, the system will first be described as deployed in a batch process production machine, then described as deployed in a continuous production machine with process gases introduced transversely and longitudinally to the direction of substrate travel.
A. The Batch Production Machine
FIGS. 3 and 4A depict the upstream cathode system 62 of the present invention as adapted for use with a batch-type production machine 60, said machine having been previously described hereinabove.
Note that the upstream cathode system 62 is illustrated in FIG. 3 without reference to a downstream cathode assembly because the system 62 need not be employed in the same chamber as the deposition cathode 34. In operation and with particular attention to FIG. 4A, process gases are pumped into a deposition chamber such as 28a (a) through supply conduits 36a, (b) across the transverse upper surface of the large area substrate plate 11a, (c) around the upstream side edge 12a of the substrate plate 11a, (d) through the plasma region defined between the lower surface of the substrate plate 11a and the cathode 34a, and expelled along the nondeposited plasma from the deposition chamber through evacuation conduit 41a. The process gases and plasma are substantially confined to the plasma region by the shield 35a which has an upper, generally L-shaped bracket 64 surrounding three sides of the substrate plate 11, said bracket 64 secured to a lower, three-sided enclosure 66. The enclosure 66 is attached to the floor 28b of the deposition chamber 28a to completely isolate the used process gases and nondeposited plasma. The substrate plate 11a rests on the shoulders of the L-shaped bracket 64.
Turning now specifically to FIG. 3, the upstream cathode system 62 may be shaped and dimensioned to substantially conform to the configuration and size of the downstream, deposition cathode assembly. The system 62 includes a precathode 68 powered by an r.f. source (either the same source as or an additional source from the one which powers the deposition cathode 34a); oppositely disposed, L-shaped brackets 70 on the top surface of which a collection plate 72, preferably formed of the same material as the 304 stainless steel substrate, (see FIG. 4A) rests; and a three-sided enclosure 74 to which the L-shaped brackets 70 are secured. The upstream cathode system is operatively disposed so that the downstream edge 72a of the collection plate 72 abuts the upstream edge 12a of the substrate 11a. In a like manner, the downstream edges of the L-shaped brackets 70, the enclosure 74 and the upstream cathode 68 abut the upstream edges of the L-shaped brackets 64, the enclosure 66 and the deposition cathode, respectively so as to prevent process gases or plasma from being trapped between the upstream cathode system 62 and the cathode assembly.
By so forming and disposing the upstream cathode system 62, the operation and gas flow pattern of the deposition cathode system remains unchanged. However, the upstream cathode system operates to create an upstream electromagnetic field and hence an upstream plasma region in which impurities are removed from the process gases and deposited onto the collection plate 72, contaminants are removed from the walls of the deposition chamber 28a and deposited onto the collection plate 72 and the process gases begin their disassociation and recombination, whereby improved semiconductor layers of substantially uniform and homogeneous composition are deposited onto the surface of the substrate plate 11a.
While the foregoing description dealt with the upstream cathode system in relation to an electromagnetic field developed by an r.f. powered cathode, the field may also be developed by a microwave generator without departing from the spirit or scope of the invention. Even when glow discharge deposition is achieved by microwave generation, it is still desirable to remove impurities from the process gases and contaminants from the walls of the deposition chamber and to have a desired chemical combination, composition and bonding of process gases across the entire large area surface of the substrate.
Further, it is preferred that the precathode 68 be powered by an r.f. power source discrete from the source which developes the deposition plasma. By employing a separate precathode power supply, a precathode power density of twice the value of the deposition cathode power density can be used to remove impurities from the process gases and contaminants from the deposition chamber walls.
Finally, note that the precathode system 62, in both the batch process and the continuous process, may be detached and physically spaced from the deposition cathode. The precathode may be either housed in a separate chamber upstream of the deposition chamber; or spaced by a matter of inches upstream of the deposition cathode. In either case, it serves the identical functions, and both dispositions of the precathode may be employed without departing from the spirit of the present invention.
B. The Continuous Process Machine
Referring to FIGS. 5 and 6, the upstream cathode system 62 of the present invention is shown disposed for operation with the deposition elements of a continuous production machine such as the one shown in FIG. 2 and detailed hereinabove.
First, viewing the apparatus of FIG. 5, the process gases are directed in a direction of movement transverse (see arrow B) to the direction of movement of the web of the substrate material 11 (see arrow A) through the deposition chamber 28. The existing deposition cathode assembly of such glow discharge deposition apparatus need only be minimally modified to accommodate and function with the instant upstream cathode system 62. Specifically, the deposition chamber 29 includes a baffled process gas supply manifold 80 which comprises a plurality of staggered baffle plates 82 adapted to establish a tortuous path of travel for process gases entering the plasma region of the deposition chamber from an apertured supply conduit 36. Adjacent the deposition cathode 34d in a direction transverse to movement of the web of substrate material 11, is the upstream or precathode 34p of the present invention. The manifold surface 80a is elongated so that the edge 80e thereof is at least coextensive with the width of the precathode 34p. The precathode 34p cooperates with overlying, extended manifold surface 80a to form an upstream plasma region through which the process gases must flow prior to entering the deposition plasma region. The process gases flowing through the upstream plasma region form a glow discharge plasma which is deposited onto the underside of the overhanging manifold surface 80a, or a similarly shaped collection plate secured thereto. The collecting manifold surface 80a has deposited thereonto impurities from the process gases and contaminants from the walls of the deposition chamber 29, while the upstream electromagnetic field begins the chemical disassociation and recombination of process gases, whereby the semiconductor layers deposited onto the exposed surface of the web of substrate material 11 at the downstream deposition cathode 34d is substantially free of impurities and contaminants and of substantially uniform and homogeneous composition.
As to the deposition apparatus illustrated in FIG. 6, note that the direction of flow of process gases (see arrow D) is substantially parallel to the direction of movement of the web of substrate material 11 through the plasma region of the deposition chamber 28 (see arrow E). The upstream cathode system 62 of the present invention is shown operatively disposed with the deposition apparatus illustrated in FIG. 6.
As with the deposition cathode assembly described hereinabove with reference to FIG. 5, the deposition cathode assembly of glow discharge deposition apparatus in which process gases flow in the same direction as the substrate moves through the plasma region, need only be minimally modified to accommodate and function with an upstream cathode system. In describing the deposition apparatus of FIG. 6, the same reference numerals will be applied to elements substantially identical in function and structure to elements described with respect to FIG. 5.
More specifically, a deposition chamber 29 includes a baffled process gas supply manifold 80 which comprises a plurality of staggered baffle plates 82 adapted to establish a tortuous path of travel for process gases entering the plasma region of the deposition chamber from an apertured supply conduit 36. The deposition cathode 34d, and the precathode 34p comprise an upper cathode plate 34a, an intermediate glass insulating sheet 34b and a lower r.f. sheet 34c. Adjacent the deposition cathode 34d is the precathode 34p which extends in the same direction as the direction of movement of the web of substrate material 11.
The supply manifold surface 80a is elongated so that the edge 80e thereof is at least coextensive with the width of the precathode 34p. The precathode 34p cooperates with the overlying extended manifold surface 80a to form an upstream plasma region through which the process gases must flow prior to entering the deposition plasma region. The process gases flowing through the upstream plasma region form a glow discharge plasma which is deposited onto the underside of the overhanging manifold surface 80a. A removable collection plate could obviously be secured to extended surface 80a, which plate would facilitate cleanup operations, i.e., the periodic removal of deposited film since the extended surface 80a has deposited thereonto impurities from the process gases and contaminants from the walls of the deposition chamber 29. Further, the upstream electromagnetic field developed between the upstream precathode 34d and the overhanging manifold surface 80a initiates the chemical disassociation and recombination of process gases, whereby the semiconductor layers deposited onto the exposed surface of the web of substrate material 11 at the downstream deposition cathode 34d is substantially free of impurities and contaminants and of substantially uniform and homogeneous composition.
Although the foregoing detailed description and the drawings have described the upstream cathode system in terms of a generally parallel, horizontally disposed cathode and collection plate combination, it should be obvious that nonhorizontally disposed cathode-collection plate combinations would operate in a manner identical to that described for the horizontal system.
In operation, it is preferred, although not essential, that the upstream cathode system 62 be energized to develop a cleansing plasma prior to energization of the deposition cathode 34d. In this manner the impurities and contaminants are collected on the upstream collection surface rather than deposited onto the substrate 11.
It should be understood that the present invention is not limited to the precise structure of the illustrated embodiments. It is intended that the foregoing description of the presently preferred embodiments be regarded as an illustration rather than as a limitation of the present invention. It is the claims which follow, including all equivalents, which are intended to define the scope of this invention.
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|US6838126 *||Jul 8, 2002||Jan 4, 2005||Semiconductor Energy Laboratory Co., Ltd.||Method for forming I-carbon film|
|US7125588||Dec 8, 2003||Oct 24, 2006||Semiconductor Energy Laboratory Co., Ltd.||Pulsed plasma CVD method for forming a film|
|US20040115365 *||Dec 8, 2003||Jun 17, 2004||Semiconductor Energy Laboratory Co., Ltd.||Method for forming a film|
|US20050196549 *||Apr 11, 2005||Sep 8, 2005||Semiconductor Energy Laboratory Co., Ltd.||Microwave enhanced CVD method and apparatus|
|U.S. Classification||118/718, 118/719, 427/572, 118/723.0MP, 118/723.0ER, 118/723.00E, 136/258, 118/50.1, 427/575, 118/723.0MW, 427/569|
|International Classification||H01J37/32, H01L21/205, C23C16/509, H01L31/04|
|Cooperative Classification||C23C16/509, H01J37/32018|
|European Classification||H01J37/32M2, C23C16/509|
|Dec 22, 1982||AS||Assignment|
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text:
Potential MA topics in History of Philosophy
Areas of expertise
The Chair of History of Philosophy has developed expertise to supervise MA projects in the following areas:
- Ancient Greek philosophy
- Early Modern philosophy
- 19th- and 20th-century German philosophy
- 20th-century French philosophy (Foucault, Derrida)
Egge Kulbok-Lattik: potential topics of supervision
I am happy to supervise these on various topics in cultural policy which is interdisciplinary research on society, comprising historical sociology, cultural history, cultural sociology, cultural theory, ethnology and political science, just to mention some of its different angles. Below are some examples, topics and suggestions which are available on request.
The models of cultural policy in Europe and Estonia before and after the World War II
What is cultural policy? Interactions between cultural field and civil society,economy and politics in the era of modern nation-states?
Eisenstadt, Shmuel N. (2002). Multiple Modernities. In: Multiple Modernities, New Brunswick.
Giddens, Anthony (2009). The Consequences of Modernity. Stanford Univeristy Press.
Isar, Yudhishthir R. (2009). Cultural Policy: Towards a Global Survey, In: Culture Unbound, 1,pp 51–65.
The formation and development of Estonian cultural policy in (1860-1940)
What were the socio-historical preconditions and reasons for cultural emancipation and national awakening of Estonians? How Estonian public sphere developed on the example of Estonian community houses in the second half of 19th of century?
Arendt, Hannah. (1959). The Human Condition. New York, Doubleday.
Guibernau, Montserrat (2007). The Identity of Nations. Cambridge, Polity Press.
Hroch, Miroslav (1996). From National Movement to the Fully-Formed Nation: The Nation-Buidling Process in Europe. In: Becoming National. (Eds) G. Eley and R. G. Suny. Oxford: Oxford University Press, pp 60-77.
Instruments and implementation of the Soviet cultural policy in Estonia (1940-1991)
In what goals and how the Soviet cultural canon and cultural policy was designed? How the instruments of Soviet cultural policy were implemented in Estonian cultural field?
Arnason, Johann (2000). Communism and Modernity. In: Multiple Modernities, 2000, Daedalus, 129, 1 ProQuest Research Library
Hoffmann, David (2003). Stalinist Values: The Cultural Norms of Soviet Modernity, 1917-1941. New York: Cornell University Press.
Slezkine, Yuri (1994). The USSR as a Communal Apartment, or How a Socialist State promoted Ethnic Particularism. In: Slavic Review, summer 1994, Vol. 53, No. 2, pp 414-452.
The ambivalence of Soviet cultural policy. Soviet cultural education and mass culture.
What kind of dialectics existed inside the official discourse of Soviet cultural policy ? What kind of dynamics, and tensions existed between alternative and official discourse?
Hoffmann, David, L., (2011). Cultivating the Masses. Modern State Practices and Soviet Socialism, 1914-1939. Cornell University Press.
Warshovsky Lapidus, Geil (1984). Ethno-nationalism and Political Stability: The Soviet Case. In: World Politics, Vol. 36, No. 4 (Jul., 1984). Cambridge University Press, pp 555-580.
Šmidchens, Guntis (2014). The power of song: nonviolent national culture in the Baltic singing revolution, London: University of Washington Press, pp 160-208.
Below is a short overview of the research projects that the Chair of History of Philosophy is involved with – these topics are opportunities to offer students hands-on research experience and supervision.
1. Determining religious disagreements. Religious disagreements are common and often embody exclusivist views. Questions about truth and objectivity can be seen as transcendental and unanswerable. In philosophy of religion, these issues transform into questions about the rationality of particular religious beliefs, which – to some extent – can be defended or opposed by means of philosophical argument. We assess the rationality of religious beliefs by analysis of historical case studies, especially by looking at religious disagreements in Early Modern metaphysics. The aim is to determine whether philosophical analysis of religious doctrines can provide a rationale for religious beliefs and in turn contribute to solving religious disagreements, which can then be seen as genuine disagreements.
2. Resolving peer disagreements. In contemporary epistemology revisionists claim that one should withhold judgment when peer disagreement occurs (i.e. disagreement with someone with roughly the same evidence and the same intellectual abilities). The non-revisionists argue that one has no such obligation. We will offer a historical perspective on this currently hotly debated topic. We analyze arguments by Ancient sceptics for their revisionist position and show that they are relevant for the contemporary discussion of peer disagreement. An important premise for the sceptics’ revisionist argument is the principle according to which one has the epistemic duty to treat one’s beliefs impartially. Contemporary non-revisionists tend to deny this principle of impartiality, e.g. by invoking the notion of “intellectual self-trust”.
Conceptions of the Soul and Immortality in the British Thought from 1640 to 1740.
The project is concerned with the conceptions of human soul put forward by British thinkers in the period of 1640-1740. In particular, it proposes to study their philosophical-theological accounts of the soul in its post-mortal states. Modern scholarly literature on the Early Modern conceptions of the soul focuses mainly on the soul in its present, embodied state. In this way, the modern scholarship tends to ignore an important aspect of their views, for Early Modern philosophers were equally interested in soul’s immortality and afterlife. They produced numerous accounts of the separate/intermediate as well as final state of the soul. No systematic research has been done on these accounts to be found in the works of British thinkers. The project aims to expound, compare and analyze the views and arguments concerning the future states of souls in their textual and intellectual context.

domain: history


text: Sign in to favourite Sign in to add to album Geographical notes close Places are defined in terms of modern geography. Copyright Information close This artwork is in public domain in its country of origin and other countries and areas where the copyright term is the author's life plus 70 years or less. If you are a copyright owner of this artwork, or his/hers legal representative, and you do not agree that this artwork is public domain, please let us know firstname.lastname@example.org WikiArt.org allows unlimited copying, distributing and displaying of the images of public domain artworks. Artworks protected by copyright are supposed to be used only for contemplation. Images of that type of artworks are prohibited for copying, printing, or any kind of reproducing and communicating to public since these activities may be considered copyright infringement. Public domain ← → The Lovers Henri Martin Original Title: Les Amoureux Style: Pointillism Genre: genre painting Media: oil, panel Location: Capitole de Toulouse, Toulouse, France Tags: male-portraits, female-portraits, houses-and-buildings, rivers-and-waterfalls, boats-and-ships Order an oil painting reproduction Ad Image dimension 508x600px, View all sizes Henri Martin Famous works The Harvest Henri Martin · 1895 In the Garden Henri Martin · 1904 The Bridge at Labastide du Vert in Spring Henri Martin · 1911 The Blue Dress Henri Martin · 1917 My House Henri Martin · The Bridge at Labastide du Vert Henri Martin · A Garden in the Sunshine Henri Martin · A Boy with Sailboats Henri Martin · Banks of the Garonne Henri Martin · In Flowers Henri Martin · Self Portrait Henri Martin · Self Portrait in the Garden Henri Martin · Labastide du Vert - Morning Effect Henri Martin · The Lovers Henri Martin · View all 408 artworks Related Artworks Sleeping Woman Georges Seurat The black bow Georges Seurat The Ploughman Georges Seurat The Painter Georges Seurat Group of figures in front of a house and some trees Georges Seurat On the balcony Georges Seurat Young Belgium Women Walter Sickert Home life Walter Sickert The scene in the theater Georges Seurat Figure Study Santiago Rusinol The tree trunk Georges Seurat Ballast Point California Charles Reiffel Bretons on the way Maxime Maufra Lady in her garden Jozsef Rippl-Ronai Café des Incoherents, Montmartre Santiago Rusinol Waiting For Customers Santiago Rusinol The Shooting Gallery, Moulin de la Galette Santiago Rusinol The cart or the horse hauler Georges Seurat Stone crusher Georges Seurat Ploughing Georges Seurat 1 Load more Advertisement.

domain: painting


The 400 Series has a depth sensing range of 10 m but has an 'expressive range' of 65 m. It is this depth scale calculation that allows the camera to see 65 m, whilst the earlier SR300 camera model can only see around 2 m.
The default depth scale of the 400 Series makes it less accurate than the SR300 at very close range but able to see much further at long range.
Quoting from SDK 2.0's projection documentation:
The default scale of a D400 device is one millimeter, allowing for a maximum expressive range of ~65 meters. The depth scale can be modified by calling
RS2_OPTION_DEPTH_UNITS, which specifies the number of micrometers per one increment of depth. 1000 would indicate millimeter scale, 10000 would indicate centimeter scale, while 31 would roughly approximate the SR300's 1/32th of a millimeter scale.


At a Glance
With parallel goals of reducing flood risk and restoring habitat, restoration master plans chart the course for resilience in three tidal creek watersheds along the South Carolina coast.
North Charleston is South Carolina's fourth largest city yet has not received a level of resilience planning proportionate to the risks facing its citizens and businesses. After the City acquired a National Fish and Wildlife Foundation grant to conduct watershed restoration master plans for three tidal tributaries to the Cooper River, Biohabitats led the planning process.
As ecological experts on a team with HLA, Inc., Biohabitats helped craft restoration master plans for the Filbin Creek, Noisette Creek, and Quitman's Marsh watersheds, all of which have already experienced frequent flooding and habitat degradation.
Biohabitats began by assessing the ecology and baseline conditions of each site. This included characterizing landscape features such as topography, soils, vegetation, habitat, hydrology, and stormwater infrastructure. The team then identified the constraints and opportunities to implement nature-based solutions to build resilience and habitat value for each site. Biohabitats worked with the city and key stakeholders to develop a shared vision as well as goals, objectives, approaches, and anticipated outcomes for each site.
Based on desktop assessment, fieldwork, and stakeholder input, Biohabitats crafted master plans for each site and developed concept designs for three selected restoration interventions. Biohabitats also explored the feasibility of initiating a related green workforce program for the City of North Charleston and prepared a report outlining recommendations.
Climate Change, Conservation, Ecological Restoration
City of North Charleston
North Charleston, South Carolina, United States
- HLA, Inc.


text:
Mathematical Art Exhibition Award
The Mathematical Art Exhibition Award recognizes "aesthetically pleasing works that combine mathematics and art." In 2008, an anonymous donor provided an endowment to acknowledge those whose works demonstrate the beauty and elegance of mathematics expressed in a visual art form.
The exhibition takes place every January at the Joint Mathematics Meetings. Three awards are made annually: One for best photograph, painting, or print (US$400); one for best textile, sculpture, or other medium (US$400); and one honorable mention (US$200). Starting in 2014, artists who have won a Mathematical Art Exhibition Award at the Joint Mathematics Meetings in year N will not be eligible for the $400 awards until the Joint Mathematics Meetings in year N+5. They may, however, display artwork in the intervening years. Honorable Mention awardees are eligible for award consideration in subsequent years.
Art Exhibit Submission Instructions
Most Recent Award: 2017
- Best photograph, painting, or print: Doug Dunham and John Shier for "Fractal Monarchs," a 30 x 40 cm digital print.
- Best textile, sculpture, or other medium: Jiangmei Wu for "Torus". The work is made of Hi-tec Kozo Paper and measures 45 x 45 x 20 cm.
- Honorable Mention: Mary Klotz for " AAABBB, two juxtapositions: Dots & Blossoms, Windmills & Pinwheels ". This work made of hand dyed silk ribbon is 66 x 46 x 3 cm.
For further information about this award, email the AMS Public Awareness Office.
See previous awards

domain: mathematics


text:
Happiness makes the world a better place
Happiness Makes the World HappierHow do you feel when you see a beautiful sunshine? I feel happy and seem to give my happy energy to others with smiles’ responses. Smiling is great for the sole and can make a sad person become briefly happy. Happiness is what people strive for in their daily lives. It also makes the world a better place since everyone is happier and looks for positive things instead of negative. Now we will look at a few different way’s of how happiness affects our lives. First happiness affects the way we all see ourselves.
A happy person is usually looking for things he/she can do for others. They may help others raking their yard, getting them some extra food, or even baby-sitting a neighbor’s sick children. A happy person needs to have someone to talk to about the weather or daily lives so they do not get to overwhelmed with anything. To kept themselves in good humor, they usually have some time set aside for themselves with minimum interrupts.
Time for yourself keeps a person from getting to burned out on all of their activities they maybe involved in on their spare time. A happy needs private time for themselves every day. Second job satiation needed on any type of job. For you to do a successful job at your workplace, your joyfulness must be shown daily.
You must also enjoy what ever type of job you work for, even if only a waitress or a dishwasher to get anything out of it. Your boss and other co-workers can tell if you hate or enjoy whatever job you do. The biggest hint is unsatisfied people complain a lot and may miss work frequently; therefore people who enjoy it are there 95% of the time and usually progress rapidly on their work.
This becomes a win-win situation for both the employer and employee. The employee workplace success is based on employee’s involvement of all the others together and offering new suggestions for more efficient procedures. Workplace success is grounded on the harmony of the employees and the positive interaction with the public. Third happiness must be found in every individual’s self. No single person can be happy if they do not like themselves first. A person’s self-esteem is made up of many factors including; how they view themselves, how they were brought up, and if they were ever encouraged to try new things.
Many studies have shown that people who view themselves well, will end up with more friends and not be afraid to try new things. This points back that happy people tend to be able to look for the good things in a person. They also are to be good listeners to anyone with a problem that needs someone to talk to for advice. A person must find happiness within themselves before helping others. Finally, happiness is an item that is needed more in our society; since we are killing ourselves and others at an alarming rate. We as a world needs to have stronger faith in our selves and others to come together for a better world.
Americans especially need to look at our heavenly job environments compared to our many countries in the world. Most Americans have not seen how some of our distance neighbors treat their people, especially their children. Just remember that happiness will be found all around us and the greatest in ourselves.

domain: psychology


I keep getting minified React error #130 when trying to use React-Bootstrap dropdowns in my project. I remixed the Glitch starter-react project to see if I could get it working there, but I’m having the same issue.
Any assistance of direction would be appreciated!
Here is the project:
Glitch starter-react with react-bootstrap dropdown
Here is what I did to try and get the dropdown working:
- Added “react-bootstrap”: “^0.32.4” as a dependency in package.json.
- Required react-bootstrap in app/components/HelloWorld.jsx
- Pasted dropdown menu code from the react-bootstrap docs website at line 27 of app/components/HelloWorld.jsx
Here is the error I’m getting:
bundle.js:37 Uncaught Error: Minified React error #130. Element type is invalid: expected a string (for built-in components) or a class/function (for composite components) but got: undefined.**
MOD EDIT: removed join token


Currently accepting votes for the Designer's Choice Award.
Remember the ID numbers of your favorite designs.
You will need them for voting.
The project is located in Szczecin, Poland.
Green areas in the city are deficit areas. Very often, free spaces are allocated for buildings, and not for creating parks or green areas. The awareness of architects and users themselves is increasing, so more and more people are aware of the important role green areas play in urban tissue, which is why the project has included them, turning asphalt and concrete surfaces into valuable greenery.
Well-designed green areas are places of rest and relaxation, they are a diversification of the urban fabric. Parks, green areas, squares are a nice change in the urban landscape. Therefore, the proposed solution, rich in low and high green, perfectly fits the current and probably future needs of users.
The main inspiration for the project was the need for transformation due to climate change. Considering the fact that the sources of non-renewable energy are decreasing, and the way they are used has a negative impact on our planet, it was decided to transform the gas station into a multifunctional, ecological facility that could adapt to the accelerating economy of the circular cycle. Following the green idea, the project was created with bionics in mind, because nature, which has been evolving for millennia, has the best solutions. In this way, a shape was made, derived from the ginkgo tree, which is endangered in natural positions. The form of its leaves was transferred to the ceilings, and the branches were reflected in columns supporting the top of the building, designed for a green terrace. Openwork clearances in organic shapes contain photovoltaic panels, supporting the acquisition of renewable energy.
The proposed transformation from a traditional gas station is primarily to create a green spot in the city. The green utility terrace, available to every resident, seems to be an ideal place for the municipal social garden, relax or party. The garden is also a viewpoint, providing great conditions for meetings outdoors.
Proposed ecological solutions
The designed station of the future assumes the most effective use of renewable energy sources and ecological materials. The green utility terrace significantly increases the biologically active area. Its entire area is covered with low and shrubby greenery. One of the materials used to rebuild the station and create new floors is a board made in technology that completely uses recycled plastic. Such material can be used both indoors and outdoors. The solar panels on the roadway and parts of parking lots will meet the electricity demand of the entire station, so it can be self-sufficient and may even be able to power the surrounding buildings. At the station, you can set up facilities for recycling waste, buying electronics, batteries, bottles, etc.
View the Listing Sheet PDF
for this submission


text:
With national rates of influenza, Covid-19 and respiratory syncytial virus rising together, the “dreaded and much anticipated triple-demic is finally here,” epidemiologist Katelyn Jetelina writes in her newsletter, Your Local Epidemiologist.
RSV is a common virus that usually causes mild, cold-like symptoms. And while most people recover in a week or two, it can be serious for infants and older adults.
The weekly Centers for Disease Control and Prevention influenza-like illness (ILI) surveillance, which includes a tally of patients that go to the doctor with a fever and a cough and/or a sore throat is a general indication of the climate of respiratory health in the United States. The report does not include laboratory-confirmed flu cases.
The ILI map for the week ending Nov. 26 shows that every state but four have a high or a very high ILI activity level. The CDC puts Kentucky’s ILI activity level among the very highest.
Jetelina writes of the national map, “This level is truly unprecedented; we’ve never seen such high levels of ILI activity at this time of year.”
Hospitalizations for respiratory illness are also on the rise. CDC Director Rochelle Walensky said Monday, “Hospitalizations are the highest now than they have been in the past decade.”
In Kentucky, Covid-19 hospitalizations increased for the second week in a row, taking a big jump in this week’s Covid-19 report. Hospitals reported 383 Covid-19 patients Monday morning, an increase of 102 over the prior Monday. That same report showed that nearly 80% of the state’s inpatient beds and 81% of its intensive-care beds were occupied.
Jetelina points out that while ILI surveillance offers an overall view of respiratory illness in the U.S, surveillance for specific diseases also exist, but is imperfect.
RSV: CDC data shows that RSV continues to rise, although we may be seeing the first signs of peaking on a national level, Jetelina reports. She adds that this is expected given that the positivity rate for RSV tests have already clearly peaked.
Flu: “Flu cases are increasing and increasing fast,” Jetelina writes. She notes that flu hospitalizations are lagged, but increasing. “We expect hospitalizations to continue to rise in weeks to come,” she writes.
Kentucky’s latest flu report shows that flu activity in Kentucky continues to rise. In the week ending Nov. 26, the state confirmed 6,378 cases of the flu, up from 3,470 the prior week. So far, the total number of confirmed cases during this flu season is 15,909.
As Inside Medicine reported, for the first time during the pandemic, flu hospitalizations overtook Covid-19 hospitalizations last week. “This may be a one-off occurrence since Covid-19 hospitalizations are increasing now, too, but it is noteworthy,” she writes.
Jetelina adds that epidemiologist are hopeful that the U.S. flu season will follow what has happened in the Southern Hemisphere (Australia specifically) where there has been a high number of flu cases but a moderate level of hospitalizations.
Covid-19: “Covid-19 is on the rise across the globe due to the combination of seasonal changes, behaviors changes, and the variant soup. In the U.S., all signs point to the beginning of a wave. For example, SARS-CoV-2 in wastewater is rapidly increasing across all regions,” she writes.
In Kentucky, the state Department for Public Health reported 5,751 new coronavirus cases last week, or an average of 821 per day. That’s a nearly 49% jump over the week before, when the state reported 3,866 new cases. But that number that was 43% lower than the week before, indicating that Kentucky continues to be on a rough plateau.
“One major concern is the rapid rise in hospitalizations among older adults, which has exponentially increased 28% in the past two weeks,” Jetelina writes. “This is partly (or wholly) due to abysmal vaccination rates—only 1 in 3 adults over the age of 65+ have their fall Covid-19 booster. A public health failure. Without a recent booster, many people are technically vaccinated but not protected.”
Bottom line, she concludes, “This viral season is like no other. . . . I’m especially concerned for hospital systems, kids under 5, and adults over the age of 65, as they are at highest risk.”
She adds, “There’s a lot we can do: mask, test before seeing loved ones, get that airflow moving, stay home when you’re sick. The least you can do for a healthy season is get a flu and fall Covid-19 booster. If you haven’t gotten one yet, it’s never too late.”
Jetelina is a California epidemiologist and biostatistician who says she writes the newsletter on Substack as a way to translate public-health science for everyday use, helping people to make evidence-based decisions. She is also a consultant to a number of organizations, including the CDC.

domain: medical


text:
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domain: gamble


text:
Let's figure it out: what pictures did Alfred Hitchcock's "Psycho" feature?
The brief plot summary, in case you should forget itThe story begins in Phoenix, Arizona. Secretary Marion Crane has stolen 40 thousand dollars from her boss and escapes from the city. She stops for the night in a secluded Bates Motel. The proprietor of the gloomy hotel is a charming young man named Norman Bates, who has rather strange and unhealthy relationship with his mother. Norman has taken a liking to his guest, but his mother strongly opposes him. And then Marion decides to take a shower, and it becomes her fatal mistake.
In case you have not seen the "Psycho" yet and are just going to watch it, we will stop here. Especially as the targeted paintings are shown in the first part of the film.
The painting and a hole in the wallWhen Marion comes to Bates Motel, Norman invites her to a light dinner in the living room. The wall behind the young man is decorated with stuffed birds and two paintings. Later, when Marion goes to her room, Norman takes one of the canvases off the wall and spies on the changing girl through a hole in the wall. Let us dwell upon this picture in detail.
The most attentive researchers of Hitchcock’s work have determined that the picture hiding the hole is the painting by the Dutch painter Frans van Mieris, the Elder "Susanna and the Elders" painted in the 17th century. It depicts a popular story from the Old Testament Book of Daniel.
The subject of this picture is very symbolic in the context of the movie. Norman Bates peeks Marion through the hole in the wall hidden behind the picture, just like the elders peeked Susanna. He is also "wounded with the love", but he has to suppress his feelings for the sake of his despotic mother. The shower scene is the culmination of the growing sense of the threat of violence, common for the picture and the movie.
The story of Susanna, who was unjustly accused and happily saved, was a rather popular story in painting since Late Renaissance. More often than not, the artists portrayed Susanna either bathing (with the elder men in the background) or defending herself against the harassment of lascivious elders. Frans van Mieris has several works depicting this story, and the canvas, captured in the film, is not the most popular of them. It is stored in the Museum of Hyacinth Rigo in Perpignan, France. There are no color reproductions of it in the Internet, as if it is a mark of respect for the black and white "Psycho".
And what about the second painting?The canvas hanging next to "Susanna and the Elders" is much easier to identify. This is a reproduction of the famous "Venus with a Mirror" by Titian. The painting was one of the artist’s favorite works, and he adamantly refused to sell it. There are many replicas of the "Venus", painted both by Titian himself and his studio.
After the death of the artist, the painting was in the possession of a Venetian patrician Cristoforo Barbarigo. It remained in his family palazzo for almost three hundred years. In 1850, Nicholas I of Russia bought the collection of the last member of the Barbarigos, thus the canvas moved to the Hermitage. However, it was not the end of the journey of the "Venus with a Mirror". In 1929, the government of the USSR decided to sell some of the Hermitage paintings, that was how this canvas and some other Titian’s paintings became part of the collection of Secretary of the US Treasury Andrew Mellon. After his death, the collection came into national possession. It became the basis for the collection of the National Gallery of Art in Washington.
What`s it got to do with Edward Hopper apparently?The paintings of the American artist Edward Hopper are directly related to the "Psycho" movie. Look at the famous sinister building of Bates Motel. It was built specifically for the film and became its most expensive scenery. And the idea of the house was inspired by the lonely empty structure half hidden in the shade at Hopper’s painting "The House by the Railroad".
In his interview about the film production, the scriptwriter Joseph Stefano said, "I told Anthony Perkins (playing Norman — Ed.) that if Norman Bates was a picture, it would be painted by Edward Hopper; and he agreed with me."
“What’s in a frame? That which we call a picture
In an improper frame will look less nice.”
Or, perhaps, the picture’s message will be obscured by too ornate or too plain framing. Here, we present a retrospective journey into the history of framing and its evolution, with illustrations and an expert’s commentary. Read more
Even Dali has to do with itBut Hopper was not alone. In 1945, Hitchcock addressed Salvador Dali with a proposal for cooperation. He wanted the artist to take part in the production of a surreal episode in the "Spellbound" movie starring Ingrid Bergman and Gregory Peck. It was the scene of a nightmarish sleep of the Peck’s amnesic character; his woman, a psychiatrist, tries to figure out his role in a mysterious murder. Therefore, Hitchcock decided that he needed Dali for the nightmare to be more accute.
The Hollywood tradition of the time held that dreams were rather obscure and fuzzy. The director did not accept this approach. After many years, Hitchcock gave an interview about the work on the film, "I wanted to depict a dream of great visual clarity — even sharper than the film itself. I invited Dali, because his works were architecturally clear. Well, De Chirico had the same qualities, like long shadows, infinite distances, convergence of lines and perspective. Nevertheless, Dali had some strange ideas. He wanted a statue, decaying into pieces like a shell, and ants creeping over it. Moreover, Ingrid Bergman covered with ants was supposed to be inside! It was really impossible."
After the "Spellbound" was released, it has received many enthusiastic reviews. However, now this film is rarely mentioned among the best works of Hitchcock. As for Dali, he almost never talked much about this work, which was completely untypical for him. Probably, it was caused by his disappointment. Only once the artist dropped that the best scenes from the dream episode were trimmed.
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- Social Leverage Weekly
- Equabli Secures $3.35M of Funding, The Newsletter Upstart Taking on Substack, and Liquid Death Hires Goldman Sachs, Aiming for 2024 IPO
Equabli Secures $3.35M of Funding, The Newsletter Upstart Taking on Substack, and Liquid Death Hires Goldman Sachs, Aiming for 2024 IPO
Social Leverage Letter | Issue #98
Get smarter faster with our curated list of thought-provoking content for founders and investors:
3 articles, 2 podcasts, and 1 video.
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Equabli (Fund IV) raised an additional $3.35 million in funding led by us here at Social Leverage with participation from Upfront Ventures and Initialized Capital. The newly raised funds will play a vital role in propelling Equabli towards its strategic objectives, including product development, market expansion, and talent acquisition.
An online newsletter platform, Beehiiv (Fund IV) is taking on Substack by offering writers higher pay and more tools. Beehiiv was founded by Tyler Denk, Benjamin Hargett, and Jake Hurd, former Morning Brew employees. Beehiiv aims to attract writers by offering pricing that’s simple, predictable, and built to scale.
The canned water company Liquid Death has hired Goldman Sachs to lead preparations for a potential IPO in 2024. Liquid Death sells water in aluminum cans and has positioned itself as a Gen Z focused brand. The company was founded in 2019 and raised at a valuation of $700 million last year.
Explore openings at our portfolio companies:

domain: economics


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How do I start my case to get dissolution
of marriage? Your case officially begins by filing a petition
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SpaceX is shooting for another launch attempt on Friday to deliver supplies to the International Space Station.
NASA confirmed the launch date on Wednesday, two days after a last-minute rocket leak delayed the mission. Stormy weather, however, is forecast for Friday. Saturday is the backup launch date.
Mission Control has rescheduled urgent spacewalking repairs because of the new launch time.
Two US astronauts, Rick Mastracchio and Steven Swanson, had been aiming for a Tuesday spacewalk to replace a backup computer that failed late last week.
The prime computer has been working fine, but NASA wants to get a new backup installed outside the station as soon as possible. These computers control the pointing of the radiators and solar wings, among other things.
The spacewalk will be either Easter Sunday or next Wednesday, depending on when – or if – the cargo ship flies.
The Dragon contains more than two tons of supplies, including material that would prove useful for the repair, but is not essential.
Former space station astronaut Christopher Cassidy, who’s helping from Houston, said the spacewalk job should be “pretty straightforward” and involve the manual turning of just three bolts on the computer box.
“We anticipate it to go quickly, but as with anything in space … you never know what’s going to be thrown at you,” said Cassidy, who served on the space station last year.
A bad valve resulted in Monday’s helium leak in the unmanned Falcon rocket. The valve is in the system used to separate the rocket’s first stage.
Although a backup valve was working properly and could have supported the flight, SpaceX followed its own policy of cancelling a launch in the event of equipment problems such as this.

domain: astronomy


Pa. game commission asked to extend state’s deer hunts
LANCASTER, Pa. – Members of the Pennsylvania Game Commission are being urged to expand deer hunting opportunities in the commonwealth.
Deer were the game species most talked about Sunday at the start of the commission’s annual winter meeting in Harrisburg, Lancaster Newspapers reported.
Farmers complained of “a tremendous amount of deer damage,” said Jeff Grove, local affairs director for the Pennsylvania Farm Bureau.
He asked commissioners to consider opening the firearms deer season on Thanksgiving weekend, rather than on the following Monday, saying it would allow more people — especially youngsters — the chance to hunt deer.
“The number of schools that close for the opening of deer season is less and less each year,” he said.
Grove said Pennsylvania always opens its archery deer season on a Saturday, and he suggested that the agency do the same in at least one of the commonwealth’s 23 wildlife management units to test the idea.
Several foresters, timber company representatives and land managers from northwest Pennsylvania told commissioners that the agency’s deer management program is working and encouraged commissioners to keep it moving forward
Susan Stout, a research forester with the U.S. Forest Service, said the Kinzua Quality Deer Cooperative, which manages deer on about 74,000 acres in McKean County, has improved the health of the herd while improving habitat and keeping hunters interested in the area.
The board votes Tuesday on hunting seasons and bag limits for 2014-15. After allowing time for the public to comment, a final vote will be held at the panel’s April meeting.


Please, help me to find this amplitudo modulasi pdf files. I’ll be really very grateful . escalas musicais para teclado pdf to excel · lenilton e amigos download gratis. in amplitude modulation, the amplitude (signal strength) of the carrier wave is varied in proportion to the waveform being transmitted. System AM (Amplitudo Modulasi) = suatu system yang menghasilkan gelombang radio dengan amplitudonya berubah-ubah sedangkan.
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The first recorded instance of its use was in when a signal was transmitted by a Canadian engineer named Reginald Fessenden. These signal formats are typically generated by removing or suppressing the carrier, and then utilising the sidebands.
What is Amplitude Modulation | AM Tutorial |
Like any other system of modulation, amplitude modulation has several advantages and disadvantages. A capacitor is used to remove the radio frequency parts of the signal, leaving the audio waveform. An amplitude modulation signal is not efficient in terms of its power usage It is not efficient in terms of its use of bandwidth, requiring a bandwidth equal to twice that of the highest audio frequency An amplitude modulation signal is prone to high levels of noise because most noise is amplitude based and obviously AM detectors are sensitive to it.
Demodulation, or the process where the radio frequency signal is converted into an audio frequency signal is also very simple. While amplitude modulation is one of the simplest and easiest forms of signal modulation to implement, it is not the most efficient in terms modukasi spectrum efficiency and power usage.
amplitude modulation – Wikidata
Demodulation of AM can similarly be undertaken in a number of ways. Amplitude modulation forms the basis of a number of forms of signal apart from the basic mode. Amplitude modulation is used in a variety of applications.
Build More-Effective Smart Devices: Later, continuous sine wave signals could be generated and the audio quality was greatly improved. Yet despite this decrease, amplitude modulation amplituddo in such widespread use, especially for broadcasting, and many amplitude modulation signals can still be heard on the various long, amolitudo and short wavebands where they will undoubtedly be heard for many years to come.
However it is still in widespread use for broadcasting on the long, medium and short wave bands as well as for a number of mobile or portable communications systems including some aircraft communications.
The output from this stage provides the information that was carried by the AM signal. Amplitude modullasi, AM is the most straightforward way of modulating a signal.
What is Amplitude Modulation
There are a number of ways in which a carrier can be modulated to carry a signal – often an audio signal and the most obvious way is to vary its amplitude. This can ajplitudo fed into an amplifier after which it can be used to drive a loudspeaker.
To achieve this, he used a continuous spark transmission and placed a carbon microphone in the antenna lead. Here the envelope of the carrier modulas be seen to change in line with the modulating signal. There are many methods of achieving this, using circuits that employ a variety of different techniques.
The circuit that is commonly used has a diode that rectifies the signal, only allowing the one half of the alternating radio frequency waveform through. As the circuit used for demodulating AM is very cheap, it enables the cost of radio receivers for AM to amolitudo kept low.
amplitudo modulasi pdf files
Ian Poole Electronics Notes Electronic Component Market Supply Forecast Electronic supply has a major impact on manufacturers and as a result it is an aspect of the industry that many are keen to forecast and prepare for and changes in the industry.
Modulating an AM signal can be achieved in a number of ways. Although very crude, signals were audible over a distance of a few hundred metres.
Broadcast technology Embedded Design principles Distribution Formulae. The resulting output will be xmplitudo required amplitude modulated signal.
Read more about AM demodulation. The sound waves impacting on moulasi microphone varied its resistance and in turn this varied the intensity of the transmission. An amplitude modulation signal only requires a simple diode detector circuit. In order that amplithdo steady radio signal or “radio carrier” can carry information it must be changed or modulated in one way so that the information can be conveyed from one place to another.
The quality of the audio was not good particularly as a result of the continuous rasping sound caused by the spark used for the transmission.
Even though it is not as widely used as it was in previous years in its basic format it can nevertheless still be found. When an amplitude modulated signal is created, the amplitude of the signal is varied in line with the variations in intensity of the sound wave. These mean that it is used in particular circumstances where its advantages can be used to good effect.
Amplitude Modulation has been in use since the very earliest days of radio technology.


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