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Paper: we have recorded the flight of a fly during take off and landing using digital high speed photography . it is shown that the dynamics of flexible wings are different for these procedures . during this observation fly flew freely in a big box and it was not tethered .
Abstract: in this fluid dynamics video , we demonstrated take off and landing of a fly . the deformation of wings is in focus in this video .

Paper: recent progress in nanofabrication technology allows the simulation of novel atomic physical phenomena on an artificial platform , such as presence of @xmath0-function - like density of states on quantum dots ( qd ) @xcite , realization of molecular - orbital state on spatially coupled qds @xcite , and formation of nanometer - sized quantum rings @xcite , which are nanoscopic analogues of benzene . among them , fabrication of semiconductor quantum rings has triggered strong interest in realization of quantum topological phenomena , which are expected in a small systems with simply - connected geometry @xcite . the aharonov - bohm ( ab ) effect , which engenders so - called _ persistent current _ @xcite , has been explored for various types of mesoscopic rings , based on metals @xcite and semiconductors @xcite , using magnetic and transport experiments . as an optical , _ i.e. _ _ non - contact _ , approach , lorke _ et al . _ first observed far - infrared optical response in self - assembled quantum rings , revealing a magneto - induced change in the ground state from angular momentum @xmath1 to @xmath2 , with a flux quantum piercing the interior @xcite . later , bayer _ et al . _ reported pronounced ab - type oscillation appearing in the resonance energy of a charged exciton confined in a single lithographic quantum ring @xcite ; furthermore , ribeiro _ et al . _ observed the ab signature in type - ii quantum dots , in which a heavy hole travels around a dot @xcite . although magneto - conductance characteristics have garnered considerable attention , optical manifestation of the ab effect has remained a controversial subject @xcite . in this regime , both an electron and a hole are excited simultaneously ; the net charge inside a ring decreases to zero . because of the charge neutrality , the loop current associated with a magnetic flux must vanish , engendering the absence of the ab effect for a tightly bound electron - hole pair ( _ exciton _ ) . several theories have been proposed that a composite nature of excitons allows for a non - vanishing ab effect in a small sufficient ring @xcite , and in excited state emissions @xcite . on the other hand , a negative prediction has also been reported in which the ab effect can hardly take place in more - realistic rings with finite width @xcite . a large difference in trajectories for an electron and a hole is necessary to exhibit the ab effect on neutral excitation @xcite . ( color online ) atomic force microscope images in 250 @xmath3 250  nm@xmath4 area for ( a ) a gaas quantum ring ( qr ) , and ( b ) a concentric double ring ( dqr ) , grown by droplet epitaxy . after ring formation , they are covered by an al@xmath5ga@xmath6as layer for optical experimentation.,width=283 ]    the present study examines the optical transition in _ strain - free _ self - assembled gaas quantum rings in a zero magnetic field . we have recently reported self - production of nanometer - sized gaas rings on ( al , ga)as by means of a droplet epitaxial technique @xcite . because of their good cyclic symmetry , together with high tunability of the ring size and shape , the present system is expected to open a new route to implement the ab effect within the optical regime . both the ground - state transition and the excited - state transition are identified by single quantum ring photoluminescence ( pl ) . the spectra are found to be in good agreement with results of single - carrier calculation .    the paper is organized as follows . in sec . ii , we briefly explain the sample preparation and the procedure of the optical experiment . in sec . iii , we present low temperature pl spectroscopy of single quantum rings . section iv presents the theoretical results ; we discuss the experimental data in terms of this model in sec . v. our conclusions are summarized briefly in sec . gaas quantum rings were grown on al@xmath5ga@xmath6as using modified droplet epitaxy @xcite . in this growth , cation ( ga ) atoms are supplied solely in the initial stage of growth , producing nanometer - sized droplets of ga clusters . after formation of the ga droplets , anion atoms ( as ) are supplied , leading to crystallization of the droplets into gaas nanocrystals . in contrast to the other methods to fabricate qds , such as stranski - krastanow growth , this technique can produce _ strain - free _ quantum dots based on lattice - matched heterosystems . in addition to these characteristics , we recently found that it has a high controllability of the crystalline shape : when we irradiate the ga droplets with an as beam of sufficiently high intensity , typically @xmath7 torr beam equivalent pressure ( bep ) at 200 @xmath8c , the crystalline shape becomes cone - like , following the shape of the original droplet @xcite . when we reduce the as intensity to @xmath9 torr bep , the qd becomes ring - like , with a well - defined center hole @xcite . further reduction of the as flux , down to @xmath10 torr bep , produces the striking formation of unique concentric double - rings : an inner ring and an outer one @xcite . the rings show a good circular symmetry , whereas small elongation is found along the [ 0 - 11 ] direction ( 5% for the inner ring and 8% for the outer ring ) . two samples are used in the experiment : a gaas quantum ring of 40 nm diameter with 15 nm height , ( abbreviated to qr , hereafter ) and concentric double - rings consisting of an inner ring of 40 nm diameter and 6 nm height , and an outer ring of 80 nm diameter with 5 nm height ( abbreviated to dqr ) . in the growth of these two rings , the same conditions were applied to the initial deposition of ga droplets ( 1.75 monolayer ( ml ) of ga at 0.05 ml / s to the surface of a al@xmath5ga@xmath6as substrate at 300  @xmath8c ) . thus , the mean volume for each structure is expected to be equivalent for qr and dqr , whereas its crystalline shape differs drastically . after ring formation , they were capped by an al@xmath5ga@xmath6as barrier of 100 nm thickness , following rapid thermal annealing ( rta ; 750 @xmath8c for 4 min ) . the ring shape before capping is characterized by atomic force microscopy ( afm ) , as shown in fig . [ fig1 ] ( see also the averaged cross - section of dqr presented in fig .  [ eh_level](c ) ) . the ring density is @xmath11 @xmath12 for both samples , allowing the capture of the emission from a single structure using a micro - objective setup . we would like to stress the difference in growth process between these quantum rings and in(ga)as rings , whose growth was previously reported @xcite . the ring formation of the latter case is associated with partial capping of a thin gaas layer on inas qds , which were originally made by the stranski - krastanow method . subsequent annealing results in the morphological change from island - like qds to ring - like nanocrystals . in contrast , the present rings are formed at the crystalline stage of gaas . the ring shape in this case is determined by the flux intensity of as beams . after the formation of rings , they are capped by a thick ( al , ga)as layer . later we apply rta to improve their optical characteristics . note that the final rta processing does not modify the nanocrystalline ring shape , according to the negligible interdiffusion of ga and as at a gaas/(al , ga)as heterointerface at the relevant temperature . @xcite    far - field emission spectra of the sample with ( a ) qrs and ( b ) dqrs at 5 k plotted on a logarithmic scale . the excitation density is 50 mw / cm@xmath4.,width=245 ]      in the pl experiment , we used a continuous wave he - ne laser as an excitation source . the laser emitted 544 nm wavelength light , corresponding to 2.28 ev in energy . the excitation beam from the laser was obliquely incident to the sample . it was loosely focused by a conventional lens ( 30-cm focal length ) into an elliptical spot of @xmath14 mm@xmath15 . emission from the sample was collected by an aberration - corrected objective lens of n.a . ( numerical aperture ) = 0.55 . combination of the objective lens and a pinhole ( 50-@xmath16 m diameter ) at the focal plane allowed the capture of emissions inside a small spot of 1.2-@xmath16 m diameter . for this spot size , @xmath17 rings were expected to lie in the focus on average . the position of detection was translated laterally so that single quantum structures were captured individually . for this purpose , we moved the objective lens with sub - micrometer precision using piezo transducers . during translation of the spot , the condition of excitation was kept unchanged because the excitation area was sufficiently larger than the area that covered the entire translation . the emission passing through the pinhole was introduced into an entrance slit of a polychromator of 32-cm focal length . after being spectrally dispersed , it was recorded by a charged - couple device detector with 0.8-mev resolution . in advance of the micro - objective measurement , we used a conventional pl setup to observe the spectra of the ring ensemble . all experiments were performed at 3.8 k.    before describing experimental results , we mention the carrier dynamics associated with photoexcitation of the present condition . for our laser beam , photocarriers are produced initially in the barrier , whose band gap is 1.95 ev . after diffusion , the carriers are captured by the quantum rings . the captured carriers then relax into the lower lying quantum ring levels where they radiatively recombine . our previous study showed the recombination lifetime in gaas/(al , ga)as qds as @xmath18 400 ps , whereas the characteristic time of intra - dot relaxation was much shorter  less than 30 ps  depending on excitation density @xcite . because of the rapid intra - dot relaxation , we can expect that an electron and a hole recombine after they are in quasi - equilibrium . the quantized levels are occupied by carriers according to the fermi distribution . similar dynamics are expected in the ring system . we present the far - field pl spectrum of the sample with qr in fig . [ macropl](a ) . it comprises several spectral components . the sharp line at 1.49 ev is assigned by impurity - related emissions from the gaas substrate . because of a thin deposited layer of the sample ( 500 nm thickness ) , the excitation beam is expected to reach the substrate , thereby producing strong emissions . the broad emission band at 1.544 ev in the center energy is attributed to recombination of an electron and a hole , which are confined in gaas qrs . the spectrum is broadened by 28 mev in full - width - at - half - maximum ( fwhm ) . the line broadening is caused by the size distribution of the rings . several emission components ranging from 1.7 ev to 1.95 ev are assigned by recombinations in the ( al , ga)as barrier . the spectral tail to lower energy suggests the presence of impurities and imperfections in the barrier layer . note that the excitation density at this measurement is quite low ( 50 mw / cm@xmath4 ) . for that reason , the impurity - related signal should be relatively emphasized . the pl spectrum of the sample with dqr is presented in fig . [ macropl](b ) . the signals that are related to the gaas substrate and to the barrier are identical to those of qr . the emission band at 1.628 ev in center energy originates from recombination of the ensemble of dqrs . it is broadened by 49 mev in fwhm . we find that the pl energy of dqr is higher than that of qr . the energy shift reflects the small height of dqr . in our rings , stronger confinement is induced along the growth direction than in the lateral in - plane direction . thus , the reduction in height , associated with formation of dqr , enhances their confinement energy , causing a blue shift in the pl spectrum . emission spectra for a single gaas qr . three examples  a , b , and c  are presented . their respective excitation densities were , from bottom to top , 1 , 10 , and 30 w / cm@xmath4 . spectra are normalized to their maxima and offset for clarity.,width=207 ]    in fig . [ fig_qr ] we show the pl spectra of three different quantum rings , qr a , -b , and -c , and their dependence on excitation intensity . in qr a at low excitation , we find a single emission line appearing at 1.569 ev , which results from recombination of an electron and a hole , both occupying the ground state of the ring . with increasing excitation intensity , a new emission line , indicated by an arrow , emerges at 1.582 ev . further increase in excitation density causes saturation in the intensity of the original line along with a nonlinear increase in the new line . superlinear dependence of the emission intensity suggests that the satellite line comes from the electron  hole recombination from an excited level of the ring . thus , the energy difference between the the ground and the excited state in the qr is 13 mev . in addition to the state - filling feature associated with photoinjection , we find the ground - state emission being shifted to low energy . it is a signature of multi - carrier effects . in the presence of multiple carriers inside a ring , their energy levels are modified by the coulomb interaction among carriers . because the optical transition energy is mainly renormalized according to the exchange correction , the many - carrier effects results in spectral red shift of the emission , depending on the number of carriers . similar features have been observed in numerous quantum dot systems including gaas dots @xcite and in(ga)as rings @xcite . note that the relevant multiplet is not spectrally resolved in our rings , but it leads to the red shift of the broad emission spectra . moreover , the biexcitonic emission is expected to contribute to the low energy tail of the spectra because the biexciton binding energy was found to be @xmath180.8 mev in our droplet - epitaxial gaas dots @xcite . at high excitation , we also find spectral broadening , which is attributed to an incoherent collision process that occurs among carriers . identical spectral features are found in qr b. the ground - state emission is observed at 1.537 ev , whereas the excited - state emission appears at 1.546 ev . the energy spacing between these two lines is 9 mev . although dependence on excitation density is quite similar for qr a and qr b , the energy levels are slightly different because of a small dispersion of the ring shape and size . we note that the linewidth of the ground state emission is also different between qr a ( 2.2 mev fwhm ) and qr b ( 3.4 mev ) . moreover , these are considerably large compared with that known for self - assembled qds . we ascribe the line broadening to spectral diffusion , _ i.e. _ , an effect of the local environment that surrounds each qr : our samples are expected to contain a relatively large density of imperfections and excess dopants , associated with the low - temperature growth of the sample . it causes low - frequency fluctuation in the local field surrounding qrs , which is due to the carrier hopping inside the barrier . this leads to efficient broadening of the pl spectra , which depend on the local environment of each ring . detailed examination of the origin of line broadening is studied in droplet - epitaxial gaas quantum dots @xcite .    in qr c , we find a shoulder structure on the ground - state emission , which suggests the split in the relevant level caused by lateral elongation , and/or structural imperfection inherent in this ring . broken symmetry in the ring shape causes degeneracy lift in the energy level , leading to observation of the doublet spectra . @xcite apart from this split structure , the same spectral characteristics are found in qr c. the energy difference from the original line to the satellite is observed to 11 mev , which is between the value of qr  a and that of qr  b.    position dependence of micro pl spectra in gaas qr at ( a ) 1.2 w / cm@xmath15 and ( b ) 36 w / cm@xmath15 . from top to bottom the position of detection is moved from 0 to 3.8 @xmath16 m in steps of 0.32 @xmath16 m . spectra are vertically offset for clarity.,width=302 ]    spatial dependence of the pl spectrum is shown in fig . [ fig_spatial ] , where the position of detection is laterally translated on the sample in steps of 0.32 @xmath16 m . figure [ fig_spatial](a ) presents the results obtained at low excitation . they exhibit a single line associated with the ground - state emission from a single qr , depending on the position of detection . lateral broadening of the emission is estimated as @xmath181.2 @xmath16 m fwhm , which is consistent with the spatial resolution of our micro - objective setup . at high excitation , the spectra change into multiplets , as shown in fig . [ fig_spatial](b ) . they show the same lateral profile with those obtained at low excitation , confirming the multiplet being emitted from a single qr , and not from multiple qrs with different energies . the energy split from the ground - state emission to the first - excited - state emission is observed to be 9 mev for this qr . emission spectra for concentric quantum double - rings , dqr a and -b . their respective excitation densities were , from bottom to top , 1 , 10 , and 30 w / cm@xmath4 . spectra are normalized to their maxima and offset for clarity . , width=207 ]    we present the pl spectra of two concentric quantum double - rings  dqr a and dqr b  in fig .  [ fig_dqr ] . similarly to the case of qr , the spectra consist of discrete lines , _ i.e. _ , a main peak following a satellite one , which is at the high energy side of the main peak . the former is associated with recombination of carriers in the ground state , whereas the latter is from the excited states . the energy difference between the ground - state line and the excited - state one is 7.2 mev in dqr a and 8.5 mev in dqr b. we point out that , in contrast to the qr case , we observe the satellite peak even at the lowest excitation . for the lowest excitation intensity , we can estimate the carrier population inside a ring to be less than 0.1 , according to the carrier capturing cross - section determined for gaas qd , which was prepared with the same epitaxial technique @xcite . observation of the excited state emission suggests reduction of carrier relaxation from the excited level to the ground level . that feature will be discussed later .    at high excitation , we find that several additional lines are superimposed on the spectra , as shown by the broken arrows . presence of these contributions implies the presence of fine energy structures in dqr . .[table1]material parameters used in the effective mass calculation for the conduction band ( cb ) and the valence band ( vb ) [ cols="<,^,^,^",options="header " , ]     we evaluate the energy levels of the ring in the framework of a single - band effective - mass envelope model @xcite . in calculation , the actual shape measured by afm is adopted as the potential of quantum confinement ; for simplicity , the ring is assumed to hold a cylindrical symmetry . the technique employed in this section follows ref .   describing the exact diagonalization of the effective - mass hamiltonian . note that , in our _ lattice - matched _ gaas/(al , ga)as rings , strain effects are negligible . for that reason , the simple effective - mass approach is expected to provide accurate energy levels . this presents a contrast to the case of stranski - krastanow grown dots , where the electronic structure is modified strongly by complex strain effects @xcite . the versatility of the present method is seen in refs .   and , showing good agreement between the asymmetric pl lineshape in a gaas/(al , ga)as qd ensemble and the calculation , taking into account the morphologic distribution of dots . we also notice that the present calculation neglects coulomb interaction between an electron and a hole . because our rings are sufficiently small that confinement effects are dominant , the coulomb interaction can be treated as a constant shift in the transition energies , independent of the choice of an electron state and the hole state . in following discussion , we are interested in relative energy shifts from the ground - state transition to the excited - state one , and dependence of the exciton binding energy on relevant ( single - carrier ) transition should be sufficiently below the experimental accuracy . thus , we restrict ourselves to calculate the single carrier energy levels , discarding coulomb correlation effects . our approach to the problem is to enclose the nanocrystal inside a large cylinder of radius @xmath20 and height @xmath21 , on the surface of which the wavefunction vanishes . care should be taken to set @xmath22 and @xmath23 away from the ring , so that the eigen values are almost independent of their choice . taking into account the rotational symmetry of the hamiltonian , and for this boundary condition , the wave function , @xmath24 , where @xmath25 is the azimuthal quantum number , is expanded in terms of a complete set of the base functions , @xmath26 , formed by products of bessel functions of integer order @xmath27 and sine functions of @xmath28 , @xmath29 where @xmath30 is the @xmath31 th zero of the bessel function of integer order @xmath32 , @xmath33 , and @xmath34 is appropriate normalization factors , _ i.e. _ , @xmath35 in advance of calculation , we have prepared a hamiltonian that includes a potential term in cylindrical coordinates . then , we calculated its matrix elements through numerical integration with @xmath36 over @xmath37 and @xmath28 . finally , the eigen states were obtained with diagonalizing matrix . for the present calculation , we have taken into account 35 bessels and 35 sine functions as the base functions for each value of @xmath27 , and @xmath38 nm . material parameters used in calculation are summarized in table  [ table1 ] .    a series of single carrier levels of qr is shown in fig .  [ eh_level](a ) . because the system has cylindrical symmetry , each carrier level is specified by the principal ( _ radial _ ) quantum number @xcite @xmath39 , and an azimuthal quantum number @xmath27 , corresponding to the angular momentum . two levels with @xmath40 are degenerated at zero magnetic field . in fig . [ eh_level](a ) , the carrier levels belonging to each radial quantum number are aligned vertically with those of a different angular momentum . we find that a vertical ( @xmath27-dependent ) sequence of quantized levels shows a typical signature of ring - type confinement . for an ideal ring with infinitesimal width , being treated as a one - dimensional system with translational periodicity , the level series is expressed as @xmath41 where @xmath42 and @xmath43 respectively represent the radius of the ring and the carrier mass . we find that the bilinear dependence of the level series , shown in eq . ( 4 ) , is reflected clearly in the line sequence in fig . [ eh_level](a ) . the energy levels in dqr are shown in fig . [ eh_level](b ) . as a result of the smaller height , the quantization energies are larger than those of qr . the level sequence of @xmath44 is more densely populated than that of @xmath45 , suggesting a large difference in carrier trajectories between the two levels . according to eq . ( 4 ) , the situation corresponds to the large effective value of @xmath42 for @xmath44 . the fact is confirmed by the wavefunctions shown in fig . [ eh_level](c ) . this figure illustrates the envelope wavefunction of an electron with various values of @xmath46 . they are of zero angular momentum . we find that the electron of @xmath47 is confined mainly in the outer ring . that of @xmath45 is in the inner ring , and that of @xmath48 is situated in both rings . that differential confinement engenders remarkable changes in their trajectory the amount of penetration for the electron of @xmath49 to the inner ring is found to be @xmath180.1 , whereas that of @xmath50 to the outer ring is @xmath180.05 . we have evaluated the oscillator strength for transitions between each electron - hole ( _ e - h _ ) level to determine a consistency between the emission spectra and the theoretical levels . the magnitude is proportional to the overlap of corresponding ( envelope ) wavefunctions . note that , because of cylindrical symmetry , optical transition is not allowed for an electron and a hole with different angular momentum . moreover , we have determined the transition strengths for the _ e - h _ pair with different @xmath46s as less than 1/10 smaller than that with the same @xmath46s . we can therefore infer that the electron , specified by a pair of @xmath46 and @xmath27 , recombines only with the hole of the same @xmath46 and @xmath27 . this selection rule allows us to describe each optical transition simply by @xmath51 . ( a ) a series of optical transition energies in qr , obtained by the calculation . the pl spectrum of qr a at 15 w / cm@xmath4 is shown in the inset . ( b ) the energies of optical transitions in dqr , together with the pl spectrum of dqr a at 10 w / cm@xmath4 for comparison.,width=207 ]    a series of transition energies for qr , obtained by the procedure described above , are shown in fig . [ pl_vs_cal](a ) . for comparison , the emission spectra of qr  a are plotted as an example of experimental data . the main peak and the high - energy satellite in the observed spectra are assigned respectively by the recombination of the _ e - h _ pair in the lowest state , @xmath52 , and that of the first excited _ radial _ state , @xmath53 . the split between the two transitions is deduced to be 13.1 mev , which agrees with the energy shift obtained by experiments . note that the emissions associated with high angular momenta are not present in the data , which suggests rapid relaxation of angular momentum , whose process is quite faster than transition between radial quantization levels or recombination between an electron and a hole . a possible origin for fast angular momentum relaxation is structural asymmetry of the ring , which results from elongation , impurity , and surface roughness . in this case , angular momentum does not represent a good quantum number , and scattering between different @xmath27 levels efficiently occurs . we show the comparison between the experimental spectra of dqr and the results of calculation in fig . [ pl_vs_cal](b ) . as in the case of qr , the main pl peak and the satellite one are explained respectively in terms of the transition of @xmath54 and that of @xmath55 . the energy split deduced from calculation is 8.8 mev , which agrees with the experimental value . it is noteworthy that , in dqr , the wavefunction of @xmath49 is localized mainly in the outer ring , whereas that of @xmath50 is localized in the inner ring . thus , the two peaks in the observed spectra come from the two rings , which consist of a dqr . in this connection , it is noteworthy that the excited - state emission in our experiment appears even when the carrier population is less than one . this presence of the excited state emission constitutes direct evidence for the carrier confinement into the two rings . tunneling probability between the inner ring and the outer one is not very large , engendering the observation of the excited - state emission . note also that the emission of the outer ring is more intense than that of the inner ring . the effect is attributable to their different surface areas , which affects the efficiency of the carrier injection from a barrier . finally , we would like to discuss the validity of the theoretical treatment which neglects the coulomb correlation between an electron and a hole . a limitation of the validity takes place when an exciton binding energy is fairly large compared to a single - carrier split energy , i.e. , 13.1 mev for qr , and 8.8 mev for dqr . in this case the coulomb correlation admixes various single - carrier levels . we can roughly evaluate the exciton binding energy of the rings in comparison with that of gaas/(al , ga)as quantum wells ( qws ) . this is because the carrier quantization of our rings is mainly associated with vertical confinement , and the lateral dimension is larger than the exciton bohr diameter . according to numerous attempts on the study of gaas/(al , ga)as qws @xcite , the qw confinement enhances the exciton binding energy from a bulk value of 3.7 mev to @xmath5610 mev at @xmath186-nm thick qws . a smaller thickness results in weaker exciton binding due to the carrier penetration to a barrier . these results support the exciton binding energy being smaller than or at most comparable to the single - carrier split energy of the rings . the observed spectral doublet , therefore , directly reflects the single - carrier levels . the situation presents a clear contrast to that of stranski - krastanow grown qds , in which the dot dimension is quite smaller than our droplet - epitaxial nanostructures , so that the exciton binding energy reaches @xmath18 30 mev . we have used a remarkable change in quantum dot shape through droplet epitaxial growth to fabricate unique semiconductor quantum ring complexes . electronic structures of the quantum rings are identified using an optical , non - contact approach . in the small ring - like system , carriers are quantized along two orthogonal degrees of freedom  radial motion and rotational motion . the latter corresponds to angular momentum . the optical transition takes place on recombination of an electron and a heavy hole , which are in the grand state of the ring , and in the excited radial state . in concentric double quantum rings , emission originating from the outer ring and that from the inner ring are observed distinctly . results of effective - mass calculations well reproduce the emission spectra applied to a single quantum ring . we believe that the present ring system will contribute to a deeper understanding of quantum interference effects in a non - simply connected geometry . in this connection , we would like to point out that our concentric double - rings are a good candidate to realize in - plane polarization for carriers , producing a robust aharonov - bohm feature in neutral excitonic transition @xcite . magnet - optical experiments using these quantum rings are now in progress . we are grateful to drs . j. s. kim , t. noda , k. kuroda , and prof . m. kawabe for their fruitful discussions . we would like to thank k. kurakami for his experimental assistance . t.  k. acknowledges a support of a grant - in - aid from the ministry of education , culture , sports , science and technology ( 15710076 ) . m. grundmann , j. christen , n. n. ledentsov , j. bhrer , d. bimberg , s. s. ruvimov , p. werner , u. richter , u. gsele , j. heydenreich , v. m. ustinov , a. yu . egorov , a. e. zhukov , p. s. kopev , and zh . i. alferov , phys . * 74 * , 4043 ( 1995 ) . r. a. webb , s. washburn , c. p. umbach , and r. b. laibowitz , phys . lett . * 54 * , 2696 ( 1985 ) ; l. p. lvy , g. dolan , j. dunsmuir , and h. bouchiat , _ ibid . _ * 64 * , 2074 ( 1990 ) ; v. chandrasekhar , r. a. webb , m. j. brady , m. b. ketchen , w. j. gallagher , and a. kleinsasser , _ ibid . _ * 67 * , 3578 ( 1991 ) ; a. yacoby , m. heiblum , d. mahalu , and h. shtrikman , _ ibid . _ * 74 * , 4047 ( 1995 ) . the principal quantum number , @xmath46 , characterizes both of the radial and vertical motions of carriers . however , we describe @xmath46 simply as the _ radial _ quantum number , because the vertical component of electronic motion is essentially independent of @xmath57 . this is due to the strong confinement along the growth direction . see fig . [ eh_level](c ) .
Abstract:

Answer: making use of a droplet - epitaxial technique , we realize nanometer - sized quantum ring complexes , consisting of a well - defined inner ring and an outer ring . electronic structure inherent in the unique quantum system is analyzed using a micro - photoluminescence technique . one advantage of our growth method is that it presents the possibility of varying the ring geometry . two samples are prepared and studied : a single - wall ring and a concentric double - ring . for both samples , highly efficient photoluminescence emitted from a single quantum structure is detected . the spectra show discrete resonance lines , which reflect the quantized nature of the ring - type electronic states . in the concentric double  ring , the carrier confinement in the inner ring and that in the outer ring are identified distinctly as split lines . the observed spectra are interpreted on the basis of single electron effective mass calculations .


Instruction: Write an abstract for the following acadamic paper.

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Paper: we have recorded the flight of a fly during take off and landing using digital high speed photography . it is shown that the dynamics of flexible wings are different for these procedures . during this observation fly flew freely in a big box and it was not tethered .
Abstract: in this fluid dynamics video , we demonstrated take off and landing of a fly . the deformation of wings is in focus in this video .

Paper: phases of matter with broken continuous symmetries exhibit topological defects , which can be thermally excited or induced via external stresses . the surface interactions of a foreign inclusion within an ordered medium can induce nontrivial distortions in the bulk medium and lead to the nucleation of defect structures @xcite . even in cases where no defects are present , the distortions that arise can often be described by virtual defects within the foreign inclusion itself in much the same way that electric fields outside a conductor can be described by image charges within the conductor . two such experimental systems which have recently been studied are langmuir monolayers @xcite and nematic emulsions @xcite .    at sufficiently high density , a langmuir monolayer forms an orientationally ordered liquid - condensed phase in which the order is characterized by a @xmath0 unit - vector order parameter , which we call the @xmath1-director @xcite . under appropriate conditions a liquid - condensed region can contain isolated domains of the rotationally isotropic liquid - expanded phase , that is , regions wherein the orientational order is absent . along the boundary separating the two phases , there is typically a preferred orientation of @xmath1 relative to the tangent vector to the boundary . the inclusions ( liquid - expanded regions ) can thus lead to a distortion of the order - parameter field of the ordered medium ( liquid - condensed region ) surrounding them . nematic emulsions are dispersions of droplets of nematic liquid crystal in an isotropic host @xcite . inverse nematic emulsions consist of surfactant coated spherical water droplets dispersed in a nematic host @xcite . the surfactant can be prepared such that the nematic director prefers to align either parallel or perpendicular to a surfactant coated surface . thus the droplets distort the local nematic field and , in the case of normal boundary conditions , the droplets themselves carry a topological hedgehog charge which must be compensated for by creating additional defect structures within the ordered medium . experimental observations @xcite in both langmuir monolayers and inverse nematic emulsions have been explained theoretically with some success @xcite . neither , however , is the simplest system one could imagine for the study of the effects of foreign inclusions in an ordered medium . in langmuir films the line tension of the interface between the two phases is so low that orientational order in the surrounding medium and the shape of the inclusion are strongly coupled , greatly complicating the theoretical treatment . in nematic emulsions , the elastic theory describing director distortions is highly non - linear , and as a result , it is very difficult to find exact solutions for the director around a droplet - defect pair . in this paper , we report observations of freely suspended inclusions in another ordered system , smectic - c films , and we develop a theory for their energetics . there are several types of circular inclusions with fixed boundary conditions that can be inserted into a freely suspended smectic - c film . the type we are concerned with here are islands , places where the film contains an integral number of additional smectic layers ( fig [ setup ] ) . islands can be introduced to a freely suspended film by ( 1 ) rapidly reducing the film area , ( 2 ) blowing across the film to pull material from the meniscus region or ( 3 ) heating the film near the smectic - to - isotropic or smectic - to - nematic phase transition , at which point isotropic or nematic droplets form in the film and remain as islands after cooling . typical islands have radii from 50 to several hundred microns . the boundaries of these inclusions are smectic dislocations , and the @xmath1 director has a preferred orientation relative to the tangent line to such dislocations @xcite thus providing our fixed boundary condition . this fixed boundary condition allows us to consider the interior and exterior regions of an island as separate systems , analogous to the way a conducting surface allows one to independently consider the electrostatic configurations interior and exterior to the conducting surface . while island - defect pairs are relatively easy to create and image ( fig . [ setup ] ) , they have the disadvantage that often the islands shrink , and it is difficult to control their size . this makes the creation of several islands of uniform size very difficult . a second type of inclusion in smectic - c films are isotropic or nematic droplets , found in materials that have a direct phase transition from the smectic - c to the isotropic phase . droplets have the disadvantage compared to islands that as one nears the isotropic transition , the birefringence of the film diminishes , and it becomes difficult to image the @xmath1-director . a third type of inclusion consists of the direct insertion of small ( 10 micron ) glass spheres into the film . while this in principle is the best technique , since size can be accurately controlled and the birefringence is unaffected , in practice it is difficult to maintain glass spheres larger than 5 microns in the film . larger spheres either rupture the film or simply pass through . regardless of its type , a circular inclusion with rigid boundary conditions along its perimeter carries a topological charge of @xmath2 . experimentally it is observed that each island nucleates a companion @xmath3 defect out of the bulk , which maintains a preferred separation from the inclusion while undergoing visible radial and azimuthal orientational fluctuations with respect to the center of the inclusion .    in this paper , we present a theoretical study of these circular inclusions in smectic - c films . we also report briefly on preliminary experimental observations that are in qualitative agreement with our theoretical analysis . the theoretical treatment of circular inclusions with rigid boundary conditions in smectic - c films is simpler than the treatment of similar defects in langmuir films and nematic emulsions since shape changes in the boundary present in langmuir films do not occur and within the one coupling constant model of smectic - c elasticity we avoid the nonlinearities inherent in the treatment of @xmath4 nematics . in fact , the equation describing the order is simply laplace s equation , @xmath5 , where @xmath6 . because we impose rigid boundary conditions , our @xmath0 results are very similar to those obtained in @xmath4 nematic emulsions with similar boundary conditions . fluctuations , however , are more pronounced in @xmath0 than in @xmath4 . if the angle @xmath7 is constrained to make a constant angle @xmath8 with respect to the tangent to the boundary of an inclusion , then an inclusion necessarily creates ( or `` is '' ) a topological defect - a vortex , or equivalently , a disclination with positive topological charge . if the boundary conditions at infinity enforce alignment along a specific direction the total topological charge must be zero , and , as a consequence , a companion defect with negative charge must be created for every inclusion . the inclusion and its companion defect form a topological dipole that interacts with other distant inclusion - defect pairs via a @xmath0 dipole - dipole interaction .    in @xmath4 nematic emulsions , fluctuations in both the distance @xmath9 between a droplet and its companion defect and the angle @xmath10 between the droplet - defect dipole and the direction of the far - field alignment are negligible , with @xmath11 where @xmath12 is the temperature , @xmath13 is a frank elastic constant and @xmath14 is the droplet radius ( @xmath15 m ) . since @xmath16 , where @xmath17 is approximately a molecular length (  @xmath18 nm ) we find that @xmath19    in our @xmath0 analog , the frank elastic constant @xmath20 has units of energy and is typically of order @xmath21 , where @xmath22 is the film thickness . taking @xmath23 , where @xmath24 is the number of layers in the film , we then find @xmath25 . our calculation actually leads to the numerically smaller result @xmath26 . in addition , logarithmic singularities in two - dimensions lead to a logarithmic dependence on the system size , @xmath27 , in @xmath28 . laplace s equation in two dimensions admits two fundamental types of point defects : a topological defect with @xmath29 and a logarithmic defect with @xmath30 . in what follows , we will refer to the charge of the topological defect as the topological charge or magnetic charge and that of the logarithmic defect as the electric charge since the angle field of the latter is equivalent to the potential produced by a point electric charge ( see appendix ) . to describe arbitrary orientations of the topological dipole with respect to the @xmath1-director at infinity , both kinds of defects are needed . the `` charges '' of the topological defects are fixed to be integers whereas those of the logarithmic defects are proportional to the angular deviation of the dipole from its favored direction .    as in @xmath4 nematic emulsions @xcite , widely separated inclusion - induced topological dipoles interact via a dipole - dipole potential arising from the arrangement of the magnetic charges associated with each inclusion . when the dipoles are not properly aligned with respect to the @xmath1-director at infinity , the inclusions will also carry a certain amount of electric charge , leading to an additional interaction . in three dimensions , the analogous interaction is unimportant because of the prohibitive cost of deviations from the direction of preferred alignment . in two dimensions , deviations can be large : this interaction is important , and it can be calculated . it predicts that correlated rotations of dipoles in which the total electric charge is zero are energetically less costly than those with non - zero electric charge . it should be possible to test this prediction experimentally . our preliminary experimental observations are in qualitative agreement with these predictions . associated with each island is a companion negative defect ( fig . [ vfs_no_q ] ) . the position of this defect fluctuates visibly with angular fluctuations apparently greater than the radial fluctuations . furthermore , defect fluctuations appear to be correlated when more than one island is present . further study will be needed to provide unambiguous confirmation of these observations . our free standing smectic - c film is closely approximated by a @xmath0 @xmath31-model @xcite . a typical film has a small number of layers , @xmath32 , ( roughly 4 - 10 ) which can be determined exactly with laser reflectivity measurements . the projection of the nematic director into the plane of the film provides us with our unit - vector order parameter @xmath1 ( the tilt is relatively constant over the area of the film ) . the effective free energy of these films contains two elastic constants - one for splay distortions ( @xmath33 ) and another for bend ( @xmath34 ) : @xmath35 d^2x.\ ] ] however , when the difference between @xmath34 and @xmath33 is small , the @xmath0 @xmath31-model provides an accurate approximation , @xmath36 d^2x \\   & = & \frac{k}{2 } \int_{\omega } ( \nabla \phi)^2 d^2x , \label{freeenergy}\end{aligned}\ ] ] where it is understood that the integral is taken over the region @xmath37 where the order parameter @xmath1 exists and is nonzero . let us now examine an ideal case of a circular inclusion immersed in an ordered medium described by an @xmath31 order parameter @xmath38 . we take eq . ( [ freeenergy ] ) to be our free energy , where @xmath13 is the frank elastic constant and the integral is to be taken over the region that the ordered medium occupies ( external to the inclusion and internal to some boundary farther away ) , namely @xmath39 , where @xmath40 is a disc of radius @xmath41 centered about the origin , @xmath14 is the radius of the inclusion and @xmath27 is the system size . we do not include any surface energies since we will assume the properties of the surface will remain fixed ( i.e. , strong pinning boundary conditions keeping @xmath1 fixed and a very large line tension keeping the shape fixed ) . we will assume that the far field is uniform at the outer boundary taking @xmath42 . next we take the boundary condition at the surface to be of the form @xmath43 , where @xmath44 is the azimuthal angle relative to the center of the disc and @xmath8 is the angle that the director @xmath1 makes with the tangent vector to the boundary . this condition gives the inclusion a topological charge ( winding number ) of @xmath2 . the far - field boundary condition requires that the total charge be 0 , thus requiring the existence of an additional topological defect with charge @xmath3 . we will find that this defect will sit fairly close to the inclusion and that the pair will constitute a dipole , which can in turn interact with other such pairs via a dipole - dipole interaction . we will note that the value of @xmath8 will only be relevant if one knows the actual direction of the far field , and then it will determine the relative angle between the far - field direction and the direction of the dipole . taking the radius of the defect to be @xmath45 and assigning a core energy to the defect @xmath46 @xcite , we simply need to find solutions for @xmath7 that depend on the position of the defect and to extract an effective free energy , @xmath47 $ ] , as a function of the defect position @xmath48 . minimization of eq . ( [ freeenergy ] ) leads to laplace s equation , @xmath49 throughout @xmath37 except at points occupied by defects . the angle field of a single charge @xmath2 defect located at @xmath50 is simply @xmath51 where @xmath52 . we note that @xmath53 satisfies laplace s equation everywhere except at @xmath54 . the angle field of a charge-@xmath55 defect at @xmath54 is @xmath56 . in particular , a charge @xmath3 defect has a field @xmath57 . there is an image solution to our problem of a disc with strong pinning boundary conditions and a uniform director field at infinity @xcite : @xmath58 and @xmath59 is an integer , which may vary depending upon the point on the circle @xmath60 at which we are evaluating the function . the function @xmath61 where @xmath62 has the following properties : @xmath63 and @xmath64 as @xmath65 . thus we can satisfy boundary conditions at @xmath60 and at @xmath66 by creating a real @xmath3 defect at @xmath67 in the medium outside the circular inclusion and a @xmath68 defect at @xmath69 and a @xmath3 defect at @xmath70 inside the disc . since in the absence of boundary conditions at @xmath27 , there would be a single @xmath2 defect at @xmath69 , we may regard one @xmath2 defect at @xmath69 and the interior @xmath3 defect as images . even though this solution does not strictly satisfy our boundary condition at @xmath27 , we claim that it is good enough for @xmath27 significantly larger than @xmath14 . to satisfy both boundary conditions would require an infinite number of images inside @xmath14 and outside @xmath27 , but the additional images would have little effect on the energy as the interested reader may easily confirm .    the collection of three charges can be viewed as a topological dipole with moment @xmath71 pointing from the induced defect in the medium to the center of the disc : @xmath72 the dipole makes an angle of @xmath73 with the direction of @xmath1 in the far field . sample configurations are shown in fig ( [ vfs_no_q ] ) . if @xmath1 is parallel to the @xmath74-axis at infinity , then the induced defect lies above the disc , and hence @xmath71 points in the @xmath75 direction when @xmath76 ( tangential boundary conditions ) ; and the induced defect lies to the left of the disc , and hence @xmath71 points in the @xmath77 direction when @xmath78 ( normal boundary conditions ) . an intermediate configuration with @xmath79 is also shown in fig . ( [ vfs_no_q ] ) .    the solution we have constructed is valid for any @xmath9 , and we now calculate the free energy of a single dipole , @xmath80 $ ] , as a function of @xmath9 at the fixed orientation @xmath73 @xmath81 = -\pi k \log ( a r_d ) + 2\pi k\log r_d \\ \nonumber   & & \quad -\pi k \log\xi -\pi k \log\left(r_d-\frac{a^2}{r_d}\right ) + 2 \pi k \log r_d + \epsilon_{\rm core } \\ \nonumber & & = -\pi k \log \left ( \frac{a^2}{r_d^2 } -\frac{a^4}{r_d^4 } \right ) +   \pi k \log \frac{a}{\xi } + \epsilon_{\rm core}.\end{aligned}\ ] ] we see that the preferred position for the defect is @xmath82 . expanding about this minimum with @xmath83 we find , @xmath84 \approx { \rm const } + 4 \pi k \left(\frac{\delta r_d}{r_d^0}\right)^2 + \cdots.\ ] ] thermal fluctuations in @xmath9 then satisfy , @xmath85 in qualitative agreement with our estimate from section ( i ) . noting that this @xmath13 is the two - dimensional constant @xmath20 from section ( i ) , we recall the estimate @xmath86 where @xmath24 is the number of layers in the film ( typically 4 - 10 ) . this would suggest that the radial fluctuations should be of order @xmath87 for a @xmath88 layer film . our experimental observations are slightly larger than this . we would now like to relax our assumption about the azimuthal location of the defect and calculate @xmath89 $ ] where @xmath90 and @xmath91 . equivalently , we now let the angle of the dipole ( @xmath92 ) vary as well as its magnitude ( fig . [ vfs_q ] ) . in doing so , we will in fact see that @xmath93 is the equilibrium azimuthal location of the defect . to find a solution , we have only to add to @xmath7 in eq . ( [ phi_r ] ) a solution to @xmath94 that is zero at @xmath95 and equal to @xmath96 at @xmath60 . such a solution can be constructed from the electric - charge field @xmath97 , which is constant for constant @xmath41 . we find @xmath98 where @xmath99 is the electric charge . the energy associated with this field is @xmath100 = f_1[(a , r_d,\phi_d^0 ) ] + \frac{\pi k}{\log \frac{r}{a } } ( \delta \phi_d)^2 . \label{f_delphi}\ ] ] from this we can calculate the magnitude of the orientational fluctuations : @xmath101 thus , in an infinite sample @xmath102 is infinite , and there is no well - defined direction of @xmath71 relative to the direction of @xmath1 at infinity . in laboratory samples one typically finds @xmath103 giving @xmath104 and hence fluctuations in the angle are reasonably enhanced by this logarithmic factor . finally again using our estimate of @xmath105 with @xmath106 we find that for @xmath107 we have @xmath108 . this corresponds to angular fluctuations of approximately 30 degrees , which should be far more noticeable than the radial fluctuations @xmath109 . observed angular fluctuations indeed appear to be of this order . a single inclusion distorts the @xmath1-director field as we have just shown . if there are two or more inclusions , the distortions they induce will give rise to effective interactions among the inclusions . if the separation between inclusions is large compared to their radii , each inclusion behaves like a dipole , and there will be a pair - wise dipole - dipole interaction between them . in addition , if the dipoles are not properly oriented with respect to the far - field @xmath1-director they spawn `` electric '' charges within the inclusion , and these give rise to a @xmath0 coulomb interaction between the inclusions . more importantly , since the values of these electric charges are not fixed , the usually constant `` self - energy '' contribution will not be constant and will greatly favor total charge neutrality within the system . this in turn will imply that fluctuations of the dipoles adhering to electrostatic charge neutrality will be enhanced over those that do not .    before proceeding we wish to clarify our notation for a single inclusion - defect pair . for simplicity and without loss of generality , we will continue to assume that the far - field @xmath1-director points in the @xmath110 direction . from the previous section we conclude that a single inclusion - defect pair can be fully described by @xmath111 $ ] , where @xmath112 is the position of the center of the inclusion ( no longer required to be at the origin ) , @xmath14 is the radius of the inclusion , @xmath8 tells us what the boundary condition is at the inclusion boundary , and @xmath113 we then found it convenient to code @xmath96 via @xmath114 . now we would like to calculate the free energy for a system of such inclusion - defect pairs , @xmath115})$ ] , where we assume that this description of multiple inclusions is valid when @xmath116 for all pairs @xmath117 . as we are now aware , each isolated inclusion - defect pair can be thought of purely in terms of the external topological defect and an arrangement of topological and logarithmic defects inside the inclusion . of course , when there is more than one inclusion , additional images must be introduced in the interior of each inclusion to satisfy boundary conditions . the full calculation of the energy is then reduced to calculating the energy from all of the topological charges and electric charges . as long as the inclusion - defect pairs are reasonably separated , however , one can obtain a good estimate of the energy by ignoring the contributions made by the additional image charges . the energy decomposes in a natural way into three pieces : the first is the contribution each individual inclusion - defect pair makes when its electric charge @xmath118 , the second is the contribution from the dipole - dipole interaction among the topological defects , and finally , the third is the total electrostatic energy arising from the electric charges : @xmath119\ } ) \approx \sum_i f_1(a_i , r_{di},\phi_{ai } ) \nonumber \\ & & + \sum_{i < j } 2 \pi k \left ( \frac{\pv_i \cdot \pv_j}{r_{ij}^2 } - \frac{2 ( \pv_i \cdot \rv_{ij } ) ( \pv_j \cdot \rv_{ij})}{r_{ij}^4 } \right ) \nonumber \\ & & + \pi k \left(\sum_i q_i\right ) \left(\sum_i q_i \log\left(\frac{r}{a_i}\right ) \right ) \nonumber \\ & & - \sum_{i < j } \pi k q_i q_j \log \left(\frac{r_{ij}^2}{a_i a_j}\right ) , \label{f_multi}\end{aligned}\ ] ] where @xmath120 is defined by eq . ( [ f_r ] ) and @xmath121 . the second term is the dipole - dipole energy and the third and fourth are the electrostatic energy . again we emphasize that this is only an approximate form for the energy valid when the pairs are sufficiently for apart .    to see the importance of the first electrostatic term in the energy we now turn to a more specific example . for simplicity we will assume that our system consists of only two inclusion - defect pairs : @xmath122 , [ r_s \ev_x , \pv_2 , a , -\pi/2]$ ] . we have taken the inclusions to have the same radii and to have the same normal boundary conditions . in addition we have placed one inclusion at the origin and the second at @xmath123 , where @xmath123 is parallel to the preferred orientation of the inclusion - defect dipoles ( fig . ( [ fluctuations ] ) ) . assuming that the magnitudes of the dipoles are fixed at the value for a single inclusion , @xmath124 , we can write @xmath125 where @xmath126 and @xmath127 ( note that @xmath128 so that @xmath129 ) . this implies each inclusion - defect pair carries an electric charge @xmath130 using eq . ( [ f_multi ] ) we can calculate @xmath131 & = & 2 f_1[(a , r_d,\frac{\pi}{2 } - \phi_a ) ] \\ \nonumber & + & 2 \pi k \left ( \frac{\pv_1 \cdot \pv_2}{r_s^2 } - \frac{2 ( \pv_1 \cdot \rv_s ) ( \pv_2 \cdot \rv_s)}{r_s^4 } \right ) , \\ \nonumber & + & \pi k ( q_1+q_2)^2 \log\left(\frac{r}{a}\right ) - 2 \pi k q_1 q_2 \log \left(\frac{r_s}{a}\right ) , \end{aligned}\ ] ] where again the first term is simply twice the energy from eq.([f_r ] ) for a single inclusion with @xmath132 . taking @xmath133 and @xmath134 , we can simplify now to find @xmath135 & = & 2 f_1[(a , r_d,\frac{\pi}{2 } - \phi_a ) ] \\ \nonumber & + & - 2 \pi k \frac{p^2}{r_s^2 } \cos\left(2 q_{+ } \log\left(\frac{r}{a}\right ) \right ) \\ \nonumber & + & 2 \pi k q_{+}^2 \left ( \log \left(\frac{r}{a } \right ) + \log \left(\frac{r}{r_s } \right ) \right ) \\ \nonumber & + & 2 \pi k q_{-}^2 \log \left(\frac{r_s}{a } \right).\end{aligned}\ ] ] we see immediately that @xmath136 is the minimum , which corresponds to @xmath137 where the dipoles are aligned with the @xmath77-axis . more interestingly we see that @xmath138 and @xmath139 are decoupled . the equipartition theorem then implies @xmath140 for the @xmath141 s we have , @xmath142 in the limit @xmath143 , fluctuations in @xmath138 tend to zero . the ratio of @xmath144 to @xmath145 , however , diverges so that in this limit , @xmath146 is finite and @xmath147 diverges . note that fluctuations in @xmath148 in the two inclusion system are much larger than fluctuations in @xmath96 for a single inclusion . of course , the ratio @xmath149 in a real system is such that @xmath150 is not much greater than @xmath151 . let us compare @xmath152 and @xmath153 to @xmath154 from equation ( [ del_phi ] ) for realistic values @xmath107 and @xmath155 . we find that @xmath156 and that @xmath157 . for @xmath106 this would correspond to angular fluctuations of a single dipole of approximately 40 degrees versus angular fluctuations of only 30 degrees for an isolated domain . furthermore we see that the fluctuations are highly correlated . thus we see that the presence of multiple domains can enhance the magnitude of the fluctuations a noticeable degree . had we not taken the separation vector to be in the direction of the far - field director we would have first been obliged to find the new equilibrium values for @xmath138 and @xmath139 . not surprisingly we would have found that the @xmath138 equilibrium value would no longer be zero , however the term in the energy for @xmath139 would remain the same . since the fluctuations in @xmath139 dominate the fluctuations in @xmath138 we would still expect the above observations concerning the magnitude of the fluctuations to be fairly accurate . furthermore , in the presence of many domains , the correlations between them may be quite complicated but we will still expect some enhancement in the angular fluctuations arising from those fluctuations which preserve electric charge neutrality . smectic - c films are adequately described by the @xmath0-@xmath31 model . circular inclusions in the film with appropriate boundary conditions carry a topological charge . global boundary conditions require the inclusions to nucleate companion topological defects out of the surrounding ordered medium , providing a good method for studying the properties of a small collection of defects . herein we have described how director configurations can be described systematically by externally nucleated topological defects and associated image defects lying within the inclusions , provided we allow for logarithmic as well as topological defects . the electric charge required is determined by the orientation of the topological dipole created by the inclusion and its companion and by the direction of the far - field director . the value of the electric charge fluctuates producing visible fluctuations of the position of the companion defect about its host inclusion . when multiple inclusions are present they interact through their topological and electric charge distributions . the topological dipole distributions associated with each inclusion - defect pair lead to a dipole - dipole interaction between them an to an alignment of the dipoles . however , thermal fluctuations of the dipole direction are large ( the fluctuations the companion about the host ) and carry electric charges with them . orientational fluctuations of the dipoles are coupled via the interaction of these electric charges . by far the strongest correlations arise from the overriding desire for global electric charge neutrality in the system ( the energy of an electric charge in @xmath0 diverges with the system size ) . we have presented detailed calculations describing this effect for the case of two inclusions , and have presented how to approach the problem for additional inclusions . we have considered here only the case of zero total topological charge brought about by parallel boundary conditions at infinity . if the @xmath1-director has some fixed angle relative to the outer boundaries of the sample , then the total topological charge is @xmath2 . in this case , a single inclusion will not force the nucleation of a companion defect . each additional inclusion will however , and there will be @xmath158 defects in a sample with @xmath24 inclusions . this is entirely analogous to the situation in multiple nematic emulsions where water droplets are captured inside spherical nematic drops    t.c . lubensky and darren link thank noel clark for helpful discussions . the authors were supported primarily by the materials research science and engineering center program of nsf under award number dmr96 - 32598 . darren link acknowledges further support from nasa under nag3 - 1846 as well as support from the nsf under dmr96 - 14061 . we take the most general @xmath7 to be of the form @xmath159 it can be shown that @xmath160 and thus if we define @xmath161 then we have @xmath162 and we see that the two families of singularities do not interact . now recall that the potential for a line charge parallel to the @xmath163axis is @xmath164 where @xmath165 are the @xmath166 coordinates where the line pierces the @xmath167plane . thus , we can identify @xmath168 with a collection of line charges or equivalently @xmath0 electrostatic charges . next , noting that for any function @xmath169 we have @xmath170 we can define @xmath171 and note that @xmath172 interestingly , the vector potential for a line of magnetic charges parallel to the @xmath163axis piercing the @xmath167plane at @xmath165 is simply @xmath173 which corresponds precisely to the singularities in @xmath174 . equivalently we can view this as a magnetic charge in @xmath0 , just as we viewed the electrostatic line charge as a charge in @xmath0 electrostatics . now , making the final identification , @xmath175 we can write @xmath176 which looks just like the energy density for electromagnetism . furthermore , we can define electric and magnetic charge densities @xmath177 and then complete the electromagnetic analogy by writing @xmath178 this is why we have chosen to call the logarithmic singularities `` electric charges '' and the @xmath179 singularities `` magnetic charges '' . of course , in this analogy we have no reason to expect the lines of magnetic charge to be quantized , whereas in the original problem there is a clear explanation as to why the @xmath179 singularities are quantized ( the requirement that the physical field @xmath7 be single - valued ) . alternatively we could have exploited the fact that @xmath180 treated the @xmath179 singularities as a separate species of logarithmic singularities and viewed our free energy as being the sum of two distinct non - interacting electrostatic energies . caption fig.1 +   + ( a ) a schematic overhead view of a generic circular inclusion , showing the relative positions of the physical and virtual defects , as well as the relationships between the far - field director , the director at the boundary of the inclusion and the direction of the topological dipole moment . the director @xmath1 is shown at the boundary and its angle with respect to the tangent vector @xmath181 measured in a counterclockwise fashion is @xmath8 . the direction of the dipole moment @xmath71 is given by the usual convention ( i.e. from negative to positive charges ) . we see from this and figure ( 2 ) that @xmath71 makes an angle of @xmath182 with respect to the far - field director . ( b ) an oblique view of a schematic representation of a film containing an inclusion consisting of one additional layer . the rods represent the actual nematogens in the film which are tilted with respect to the normal to the smectic planes . on the top plane the projection of the nematogens into the smectic plane is represented using the conventional nails with heads representation , where the head of the nail distinguishes which end of the projection into the plane corresponds to the end touching the plane . the companion defect is centered at the dark circle . the figure to the right indicates the two dimensional interpretation , consisting of the boundary of the circular inclusion , the direction of the far - field director as well as the orientation of the director at the boundary of the inclusion , the positions of the physical and virtual defects and the resulting topological dipole moment . ( c ) photograph of a four layer freely suspended smectic - c liquid crystal film with a circular five layer island of radius 75 microns . the companion @xmath3 defect is seen sitting outside the island . the collection of image charges is shown in the inset . the presence of only a single @xmath2 point defect in the center of the island in the photograph reminds us that the charges that the companion @xmath3 defect interacts with are image charges imposed by the boundary conditions and not real physical charges inside the island . as mentioned in the paper , the rigid boundary conditions along the dislocation separating the bulk from the interior of the island allows us to consider the regions independently . the visible @xmath3 defect has been observed undergoing large fluctuations in its radial position as well as its azimuthal orientation . +   + caption fig.2 +   + three examples of the director field @xmath1 around an inclusion for three different values of @xmath8 . the direction of @xmath71 is indicated . in each case we have placed the external defect at its preferred position , in particular @xmath183 and hence @xmath184 . the values of @xmath185 , the azimuthal position of the companion defect , are indicated . [ vfs_q ] shows examples of fields where @xmath96 is nonzero . also note that in each picture the far - field director is taken to be in the @xmath77 direction . +   + caption fig.3 +   + director configurations with nonzero values of @xmath96 . the far - field director is assumed to be in the positive @xmath74 direction , and @xmath76 . thus the equilibrium position of the companion defect is above the inclusion ( @xmath186 ) and the equilibrium direction of @xmath71 is down . in ( a ) @xmath187 and in ( b ) @xmath188 . compared to the equilibrium configuration of fig . 2(a ) , note the increasing distortion of the @xmath1-director as @xmath96 increases . the energy of ( b ) with @xmath71 pointing up is clearly higher than that with @xmath71 down . unlike @xmath4 nematics , there is a preferred direction rather than a preferred axis of orientation for @xmath71 . this is not surprising since a nematic is invariant under @xmath189 whereas a smectic - c is not invariant under @xmath190 . +   + caption fig.4 +   + above we have two interacting inclusions . the equilibrium configuration for the dipoles is represented by the solid arrows . the dashed arrows represent possible orientations of the dipoles due to thermal fluctuations . note the correlations in the directions of the dipole moments , when @xmath191 is tilted downward we expect to find @xmath192 tilted upward .
Abstract:

Answer: in thin films of smectic - c liquid crystals , localized regions containing additional smectic layers form circular inclusions that carry a topological charge . such inclusions nucleate a companion topological defect . these inclusion - defect pairs are modeled as topological dipoles within the context of a one - coupling constant approximation to the @xmath0 frank free energy . deviations of the dipole direction from a preferred orientation cause the dipoles to acquire a logarithmic charge . thermal fluctuations of the dipole direction are calculated and found to be large , scaling as the logarithm of the system size . in addition to dipole - dipole interactions arising from the topological charges , we also find that the thermal fluctuations of the dipole directions are coupled through a preference for global charge neutrality of the logarithmic charges . psfig    corresponding author : david pettey + department of physics and astronomy + university of pennsylvania + philadelphia , pa 19104