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Paper: we have recorded the flight of a fly during take off and landing using digital high speed photography . it is shown that the dynamics of flexible wings are different for these procedures . during this observation fly flew freely in a big box and it was not tethered .
Abstract: in this fluid dynamics video , we demonstrated take off and landing of a fly . the deformation of wings is in focus in this video .

Paper: self - assembled semiconductor quantum dots ( qds ) have attracted a large interest because the discrete and isolated energy levels due to the 3d confinement can be utilized in high - efficiency and low - threshold current lasers,@xcite single photon emitters@xcite and in quantum computing applications ( qubits ) . @xcite 1.3 @xmath3 m optical devices have been achieved using inas / gaas quantum dots,@xcite however , it is difficult to push further the inas / gaas qd devices to work at the more desirable @xmath21.55@xmath3 m telecommunication wavelength because the large compressive strain ( 7% ) in the inas / gaas dots enlarges the conduction - valence energy gap of inas too much for this purpose . intuitively , a inas dot embedded in a less lattice mismatched host material , e.g. inp , should solve the problem . indeed , recently there have been reports on 1.55 @xmath3 m inas / inp qds lasers with a high - gain and a low - threshold current,@xcite which opens up the possibility to integrate quantum dot material into an optical cavity@xcite and hence to reliably fabricate a single photon source in the telecommunications wavelength range.@xcite    despite their importance , there are only few studies on the inas / inp system , both theoretically @xcite and experimentally @xcite compared to the well studied inas / gaas qds . although the inas / inp dots and the inas / gaas dots have the same dot material , they differ in three aspects , ( i ) inas / inp has a much smaller lattice mismatch ( 3% ) than inas / gaas ( 7% ) . ( ii ) the inas / inp dots have a less confining potential for electrons , but a stronger confinement for holes than the inas / gaas dots . ( iii ) the inas / inp dots share the same cation ( in ) , while the inas / gaas qds share the same anion ( as ) at the interface . these differences may lead to different electronic and optical properties of the two systems . the continuum theories , such as those based on the effective mass approximation ( ema ) and multi - bands @xmath7 method , may in principle capture the first two differences , however , to account for the third aspect , one needs atomistic theories such as the empirical pseudopotential methods @xcite or the tight - binding methods.@xcite the empirical pseudopotential methods have been successfully applied to various systems . @xcite in this paper , we perform a comparative study on the inas / inp qds and inas / gaas qds using an atomistic pseudopotential method . we find that there are significant differences in the electronic structure between the two systems , including the single - particle energy levels and optical properties . these differences , which have not yet been paid enough attention to , could be revealed in the future high - resolution optical spectroscopy @xcite and charging experiments . @xcite    the rest of the paper is organized as follows . in sec . [ sec : methods ] , we introduce briefly the atomistic pseudopotential method used in the calculations . in sec . [ sec : strain ] , we compare the strain profiles and the strain modified band - offsets for the inas / gaas and inas / inp qds . in sec . [ sec : single - particle ] , we compare the pseudopotential calculated electronic structure as well as the wavefunctions of the two dots . we compare the excitonic transitions of the two dots in sec . [ sec : excitons ] and conclude in sec . [ sec : conclusion ] . the geometries of the qds studied here are lens - shaped inas dots embedded in the host materials ( gaas or inp ) matrices containing 60 @xmath8 60@xmath8 60 8-atom unit cells . the dots are assumed to grow along the [ 001 ] direction . we performed the calculations on dots with base diameters @xmath5= 20 , and 25 nm , and for each base diameter , we vary the dot heights @xmath9 from 2.5 nm to 5.5 nm , as the dot height is relatively easy to control in experiments.@xcite we first relax the dot+matrix system by minimizing the strain energy as a function of the coordinate @xmath10 of atom @xmath11 at site @xmath12 for all atoms , using valence force field ( vff ) methods.@xcite once we have the atom positions , we obtain the energy levels and wavefunctions by solving the single - particle schrdinger equation , @xmath13 \psi_i({\bf r } ) = \epsilon_i \;\psi_i({\bf r } ) \ ; , \label{eq : schrodinger}\ ] ] where @xmath14 is the superposition of local screened atomic pseudopotential*s * @xmath15 , and the total ( non - local ) spin - orbit ( so ) potential @xmath16 . the screened pseudopotentials  @xcite are fitted to the physical important properties of the materials , including the band energies at high - symmetry points , effective masses , strained band offsets , hydrostatic and biaxial deformation potentials of individual band edges . the pseudopotentials of inas / inp dots are given in appendix [ sec : epm ] , whereas the potentials for inas / gaas qds are taken from ref .  . the schrdinger eq . ( [ eq : schrodinger ] ) is solved by expanding the wavefunctions @xmath17 as linear combinations of bulk bands ( lcbb )  @xcite @xmath18 of band index @xmath19 and wave vector @xmath20 of material @xmath21 (= inas , gaas , inp ) , strained uniformly to strain @xmath22 . we use @xmath23 for the hole states , and @xmath24 for electron states on a 6@xmath86@xmath816 k - mesh . we use @xmath25 for the matrix material , and an average @xmath22 value from vff for the strained dot material ( inas ) . it has been shown that the energy levels changes in inas / gaas qds due to the piezoelectric effects are quite small . @xcite because the lattice mismatch in the inas / inp qds is only half of that of the inas / gaas qds , we expect that the piezo - effect should be even smaller in the inas / inp dots , and therefore is ignored in the present calculations . the exciton energies are calculated using the configuration interaction ( ci ) method following ref . . we first compare the strain profiles in the inas / gaas and the inas / inp qds . figure [ fig : strain_gaas ] ( a ) , ( b ) depict the hydrostatic and biaxial strain along the [ 100 ] direction and the [ 001 ] direction respectively for the inas / gaas dot , whereas fig . [ fig : strain_inp ] ( a ) , ( b ) depict the strain profiles for the inas / inp quantum dots . the strain is calculated for the lens - shaped qds with @xmath5=25 nm , and @xmath9=3.5 nm . the hydrostatic(isotropic ) strain is defined as @xmath26 , reflecting the relative change of volume i.e. , @xmath27 , whereas the biaxial strain is defined as @xmath28 . as we can see , the hydrostatic strains of the inas / inp and inas / gaas dots have very similar features : both are almost constants inside the dots and decay rapidly to zero in the matrices . the hydrostatic strain is negative in both dots , suggesting that the inas dot is compressed . however , the hydrostatic strain in the inas / inp dot is about half of that in the inas / gaas dot . the biaxial strain of both qds also has similar features , decaying fast in the [ 100 ] and [ 010 ] directions outside the dots , it has long tails along the [ 001 ] direction .    the hydrostatic strain and the biaxial strain will shift the conduction band minimum ( cbm ) and the valence band maximum ( vbm ) , and therefore modify the band - offsets of the qd . the biaxial strain will further split the heavy - hole ( hh ) and light - hole ( lh ) bands . we analyze the strain - modified band - offsets via pikus - bir model , @xcite using the local strain input from vff calculations . this model , however , serves only as an illustration of the strain effect and is not used in our actual calculation of the single particle energy levels . the strain modified band - offsets are illustrated in fig . [ fig : strain_gaas ] ( c),(d ) for inas / gaas quantum dot , and in fig . [ fig : strain_inp ] ( c),(d ) for inas / inp quantum dot along the [ 100 ] direction and [ 001 ] direction respectively . the vbm of the unstrained host materials is set to be zero as the reference energy . the band - offsets in the inas / gaas dot are 480 mev for the electron and 280 mev for the hole , compared with 1050 mev for the electron and 46 mev for the hole in the unstrained system . @xcite the confinement potential for electrons is stronger than that for holes . in contrast , for the unstrained inas / inp system , the band - offset@xcite is 580 mev for the electron and 420 mev for the hole , which change to 320 mev and 530 mev respectively in the inas / inp qds , due to the strain effects . the confinement potential for holes is stronger than that for electrons.@xcite therefore , the confinement potentials in the inas / gaas and the inas / inp qds are very different . while the confinement for electrons is weaker in the inas / inp qds , the confinement for holes is significantly stronger . how the different confinement potentials lead to different electronic structure in the two dot systems will be discussed in sec . [ sec : single - particle ] . it was pointed out in ref . that in the tall inas / gaas qd , the biaxial strain might develop hole traps that localize holes at the interface of the qds . this is unlikely to happen in the inas / inp qds for two reasons . ( i ) the strain in the inas / inp qds is much smaller than in the inas / gaas qds . ( ii ) the band - offset for holes in the inas / inp qds is much larger than in the inas / gaas qds . the biaxial strain splits the hh and lh bands in addition to shifting the vbm . hh is higher in energy than the lh band , i.e. , @xmath29 inside both dots . the hh - lh splitting is about 180 mev for the inas / gaas qd and 120 mev for the inas / inp qd . outside the qd , the heavy - light - hole splitting changes sign , i.e. , @xmath30 . @xcite it is also interesting to note that the so band inside the inas / gaas quantum dot is lower in energy than outside the qds , while the opposite is true for the inas / inp quantum dot , due to the large band - offsets between inas and inp for holes . in this section , we compare the pseudopotential calculated single - particle energy levels as well as the wavefunctions of the inas / inp qds to those of the inas / gaas qds . the energy levels are compared in three scales : ( i ) the energy difference between the lowest electron state and highest hole state , which largely determines the exciton energies and is in the order of 1 ev , ( ii ) the intraband energy spacing which is in the order of a few tens mev . ( iii ) the intraband @xmath0 level splitting due to the c@xmath31 atomistic symmetry of the qds , which is in the order of a few mev . the single - particle energy levels of the inas / inp dots are summarized in table . [ tab : levelspacing ] , whereas the results for the inas / gaas dots can be found in table i of ref . . the results of the inas / gaas qds are very similar to what was obtained in ref . . figure [ fig : confiedstate](a ) depicts the energy levels of all confined electron states and 6 highest confined hole states of the inas / inp qds for various sizes . as a reference , we show in fig . [ fig : confiedstate](b ) the lowest 6 confined electron levels and the highest 6 confined hole levels of a inas / gaas qd of @xmath5=20 nm , @xmath9=2.5 nm . the zero energy is chosen to be the vbm of the host materials . the confined electron ( hole ) states are defined to be the states whose energies are lower ( higher ) than the cbm ( vbm ) of the host materials . we also show the electron and hole envelope wavefunctions of the inas / gaas and inas / inp qds for two dot geometries : a flat dot ( @xmath5=25 nm , @xmath9=2.5 nm ) in fig . [ fig : wavefunction ] ( a ) ( b ) and a tall dot ( @xmath5=25 nm , @xmath9=5.5 nm ) in fig . [ fig : wavefunction ] ( c ) ( d ) . we show the lowest 6 electron and the highest 6 confined hole states for each dot . in all cases , the isosurface is chosen to enclose 50% of the total charge . the number on the bottom of each small panel gives the percentage of the density localized inside the qd .      as we can see from fig . [ fig : confiedstate ] , the inas / inp qds have fewer confined electron states compared to the inas / gaas qds due to the smaller conduction band offset . in the smaller inas / inp qd with @xmath5=20 nm , @xmath9=2.5 nm , only one electron state ( @xmath32 ) is confined . when we increase the dot base and height , more states are confined . for the dot with @xmath5=25 nm , @xmath9=2.5 nm , @xmath32 , @xmath33 and @xmath34 are confined , whereas in the dot with @xmath5=25 nm , @xmath9=3.5 nm , the @xmath35 and @xmath36 levels are also confined . the confined electrons show well defined @xmath37 , @xmath0 , @xmath1 energy level shell structure in both the inas / inp and the inas / gaas dots .    for the inas / gaas qds , the electron wavefunctions of the flat dot [ see fig . [ fig : wavefunction ] ( a ) ] and the tall dot [ see fig . [ fig : wavefunction ] ( c ) ] have very similar shapes . the lowest state has @xmath37-like wavefunction , followed by 2 @xmath0-like states . the lower energy @xmath0 orbital ( @xmath33 ) has peaks along the [ 1@xmath60 ] direction , whereas the higher energy @xmath0 orbitals ( @xmath34 ) has peaks along the [ 110 ] direction . @xcite considering the next three levels , close in energy , the first two orbitals ( @xmath38 , @xmath39 ) that have similar shapes are @xmath1 orbitals , whereas the third orbital ( @xmath36 ) having a peak in the dot center , is the 2@xmath37 orbital . the wavefunctions of the inas / inp dots have very similar shapes to the corresponding ones of the inas / gaas dots , except that the wavefunctions of the inas / inp dots are larger , indicating that the electrons are less confined in the inas / inp dots . in the flat inas / inp qd , only about 53% of @xmath32 state is confined in the dot compared to 78% in the inas / gaas qd of the same size . even in the tall inas / inp qd , less than 82% of the @xmath32 state is confined compared to 92% in the tall inas / gaas qd . the valence band offset for the inas / inp qds is about 530 mev , which is almost twice as much as in the inas / gaas qds . therefore , more hole states are confined in the inas / inp dots than in the inas / gaas dots . unlike the inas / gaas dot , where the energy level shell structure for holes are not so obvious,@xcite the inas / inp dots have well defined hole @xmath37 , @xmath0 , @xmath1 energy level shell structure , similar to those of electrons . the shape of the hole wavefunctions in the inas / gaas dot is more complicate than that of the electron wavefunctions . but nevertheless in the flat dot [ see fig . [ fig : wavefunction ] ( a ) ] they can still be recognized as @xmath37 , @xmath0 , @xmath1 , 2@xmath37 orbitals although with some mixed characters . @xcite in the tall inas / gaas dot , the holes are strongly localized on the interface of the dot due to the strain effects , @xcite and do not have clear @xmath37 , @xmath0 , @xmath1 characters any more [ see fig . [ fig : wavefunction ] ( c ) ] . on the other hand , the hole wavefunctions of the inas / inp dots are quite different from those of the inas / gaas dots . they are quite similar to the electron wavefunctions , for both the flat and tall dots , except that the two @xmath0 orbitals switch order in energy , i.e. , the first hole @xmath0 orbital has peaks along the [ 110 ] direction , whereas the second hole @xmath0 orbital has peaks along the [ 1@xmath60 ] direction . the rotation of the @xmath0 orbitals has also been noticed by sheng et al.,@xcite and was attributed to the piezoelectric effects . however , in our calculations , the piezo - effect is ignored , and therefore it can not be the reason for the @xmath0 orbital rotation . the rotation of the wavefunctions can be explored experimentally via magnetocapacitance spectroscopy . @xcite unlike in the inas / gaas dots , no hole localization has been found in the inas / inp dots , because of their smaller strain and the large confinement potential for holes , as is discussed in sec . [ sec : strain ] . the holes are strongly confined in the inas / inp qds . even in a small inas / inp qd , more than 80% of charge density is localized in the qd for the @xmath40 and @xmath41 states . as a result , in a small inas / inp qd , electrons could escape from the dot much more easily than holes , resulting in a positively charged system . therefore the inas / inp dot might be a good candidate for a memory device via hole storage in the dot . @xcite      the single - particle electron - hole energy gap @xmath42 is summarized in table [ tab : levelspacing ] . for the inas / inp qds with @xmath5=20 nm , and @xmath9=2.5 nm , @xmath43 917 mev , which is about 180 mev less than that of the inas / gaas dot of the same size . the electron energy levels move down in energy , whereas the hole energy levels move up in energy , with the increasing of the base and height of the dot , as shown in fig . [ fig : confiedstate ] ( a ) . as a result , @xmath44 decreases with the increasing of the dot size , due to the reduced confinement . for the dot of @xmath5=20 nm , @xmath44 changes from 918 mev at @xmath9=2.5 nm , to 798 mev at @xmath9=5.5 nm , with a 120 mev reduction . a similar @xmath44 reduction has been found for the inas / inp dots of base @xmath5=25 nm when the dot height increases from 2.5 nm to 5.5 nm . the electron - hole energy gap reduction results in a corresponding redshift of the exciton emission lines ( sec . [ sec : excitons ] ) . .summary of the pseudopotential - calculated single - particle level spacing ( in mev ) of the inas / inp quantum dots of different base sizes and heights ( in nm ) . unconfined states are leave in blank in the table . [ cols="^,^,^,^,^,^,^,^,^,^,^ " , ]     in table . [ tab : fitproperties ] we report the target values we have fit for the binary inas , and inp , and the results of the fitting procedure . the target values correspond to the band parameters used in the literature@xcite at t = 0k . a 5 ry kinetic cutoff was used when generating the pseudopotentials . this cutoff has then been used in the qd calculations of this paper . from table [ tab : fitproperties ] we see that the fit is satisfying . the corresponding parameters of the empirical pseudopotentials are given in table [ tab : empricalparameters ] . although we fitted only a few band properties per material , we checked that the fit works also for the full band structure . the predicted ( not fitted ) critical point energies are also reported in table [ tab : fitproperties ] . notice that we are using slightly different potentials for the in atoms in inp and inas , to take into account the different charge redistribution occurring around the in atom when it is placed in a different environment . considering only the nearest - neighbor environment , the potential of each in atom in the structure is obtained as : @xmath45    l.h . acknowledges the support from the chinese national fundamental research program , the innovation funds and `` hundreds of talents '' program from chinese academy of sciences , and national natural science foundation of china ( grant no . 10674124 ) . r. m. acknowledges support from the italian miur prin 2005 .
Abstract:

Answer: we investigate the electronic structure of the inas / inp quantum dots using an atomistic pseudopotential method and compare them to those of the inas / gaas qds . we show that even though the inas / inp and inas / gaas dots have the same dot material , their electronic structure differ significantly in certain aspects , especially for holes : ( i ) the hole levels have a much larger energy spacing in the inas / inp dots than in the inas / gaas dots of corresponding size . ( ii ) furthermore , in contrast with the inas / gaas dots , where the sizeable hole @xmath0 , @xmath1 intra - shell level splitting smashes the energy level shell structure , the inas / inp qds have a well defined energy level shell structure with small @xmath0 , @xmath1 level splitting , for holes . ( iii ) the fundamental exciton energies of the inas / inp dots are calculated to be around 0.8 ev ( @xmath2 1.55 @xmath3 m ) , about 200 mev lower than those of typical inas / gaas qds , mainly due to the smaller lattice mismatch in the inas / inp dots . ( iii ) the widths of the exciton @xmath4 shell and @xmath5 shell are much narrower in the inas / inp dots than in the inas / gaas dots . ( iv ) the inas / gaas and inas / inp dots have a reversed light polarization anisotropy along the [ 100 ] and [ 1@xmath60 ] directions .


Instruction: Write an abstract for the following acadamic paper.

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Paper: we have recorded the flight of a fly during take off and landing using digital high speed photography . it is shown that the dynamics of flexible wings are different for these procedures . during this observation fly flew freely in a big box and it was not tethered .
Abstract: in this fluid dynamics video , we demonstrated take off and landing of a fly . the deformation of wings is in focus in this video .

Paper: +    the creation of collective atomic excitations via spontaneous raman emission plays an important role in well - known quantum information protocols , in particular the quantum repeater @xcite protocol proposed by duan , lukin , cirac and zoller ( dlcz ) @xcite ; for other protocols based on the same process see @xcite . the basic ( idealized ) scheme is as follows , cf . [ levels ] . in an ensemble of three - level systems with two ground states @xmath0 and @xmath1 and an excited state @xmath2 all @xmath3 atoms are initially in the state @xmath0 . an off - resonant laser pulse on the @xmath4 transition ( the _ write _ pulse ) leads to the spontaneous emission of a raman photon on the @xmath5 transition ( the _ stokes _ photon ) . detection of this photon in the far field , such that no information is revealed about which atom it came from , creates an atomic state that is a _ coherent _ superposition of all the possible terms with @xmath6 atoms in @xmath0 and one atom in @xmath1 , in the simplest case the completely symmetric state @xmath7 such a state corresponds to a single _ collective atomic excitation _ in @xmath1 . in general the term with the @xmath8-th atom in @xmath1 will have a phase @xmath9 , where @xmath10 is the @xmath11 vector of the write laser , @xmath12 is the @xmath11 vector of the detected stokes photon , and @xmath13 is the position of the @xmath8-th atom . the phases in eq . ( [ ideal ] ) thus correspond to the case @xmath14 . moreover in practice the amplitudes of the different terms may vary , depending on the laser profile and the shape of the atomic ensemble . a remarkable feature of such collective excitations that is of great interest for practical applications is that they can be _ read out _ very efficiently by converting them into single photons that propagate in a well - defined direction , thanks to collective interference @xcite . resonant laser excitation of such a state on the @xmath15 transition ( the _ read _ laser pulse ) leads to an analogous state with @xmath6 atoms in @xmath0 and one delocalized excitation in @xmath2 . all the terms in this state can decay to the initial state @xmath16 while emitting a photon on the @xmath17 transition ( the _ anti - stokes _ photon ) . if the phase matching condition @xmath18 is fulfilled , where @xmath19 is the @xmath11 vector of the read laser and @xmath20 that of the anti - stokes photon , then the amplitudes corresponding to the various terms interfere constructively ( provided that there are no other effects disturbing the interference , such as atomic motion or the effects studied in this paper , cf . below ) , leading to a very large probability amplitude for emission of the anti - stokes photon in the direction given by @xmath21 . for atomic ensembles that contain sufficiently many atoms , emission in this one direction can completely dominate all other directions . this allows a very efficient collection of the anti - stokes photon @xcite . note that there is no such collective interference effect for the emission of the stokes photon , since its emission by different atoms corresponds to orthogonal final states , e.g. the state @xmath22 if the stokes photon was emitted by the first atom etc . full `` which - way '' information about the origin of the photon is thus stored in the atomic ensemble , making interference impossible @xcite . as a consequence the total emission probability for the stokes photon is simply given by the sum of the emission probabilities for each atom , and there is no preferred direction of emission . the creation of collective excitations via spontaneous raman emission is usually analyzed theoretically under the assumption that the write pulse is far off - resonance @xcite ( but see section vi.b of ref . @xcite ) . under this condition it is possible to adiabatically eliminate the excited state . however , in experiments the far off - resonance condition is frequently not fulfilled . from an experimental point of view it can be advantageous to approach resonance in order to increase the rate for the spontaneous raman process or in order to avoid exciting nearby levels . for excitation relatively close to resonance it is no longer justified to eliminate the excited state . the precise frequency of the excited state then influences the dynamics @xcite , and it becomes important to consider the effects of inhomogeneous broadening of the transition between ground and excited state @xcite , which is significant in many experimental situations , e.g. for hot gases @xcite , where the relevant mechanism is doppler broadening . ( note that the effects of doppler broadening are negligible in similar experiments with cold atomic gases @xcite . ) inhomogeneous broadening will also be an essential factor in future experiments with solid - state atomic ensembles , in particular rare - earth doped crystals @xcite , where it is due to the crystal environment . these systems are otherwise very attractive candidates for realizing the dlcz and similar protocols thanks to their excellent coherence properties . for example , storage times exceeding 1 second have already been demonstrated in such a system for coherent atomic excitations in @xmath1 created via electromagnetically induced transparency @xcite , and light at the single - photon level has been stored and re - emitted using the `` atomic frequency comb '' protocol @xcite . ref . @xcite proposed to reduce the inhomogeneity in these solid - state systems via spectral tailoring techniques similar to those employed in light storage experiments @xcite . however , such an approach greatly reduces the number of available atoms , making it much harder to write and read the atomic excitations efficiently . motivated by these considerations , we here analyze the creation of collective atomic excitations in inhomogeneous systems by spontaneous raman emission without resorting to the usual adiabatic elimination of the excited state . this makes it possible to quantify the impact of near - resonance excitation in combination with inhomogeneous broadening on the _ collectivity _ of the created atomic excitation . we introduce the term collectivity for the fidelity of the created excitation with respect to the ideal state of eq . ( [ ideal ] ) . this quantifies the degree of collective interference that is possible when reading out a given atomic excitation . it is equal to one ( corresponding to the possibility of perfect collective interference ) for excitations that are created under far off - resonant conditions . it is reduced for near - resonant excitation in inhomogeneous systems . in such systems , atoms closer to resonance with the write laser will have a larger amplitude of emitting a raman photon . moreover for near - resonant ( non - adiabatic ) excitation the excited state plays a role in the raman process , leading to phases that differ from atom to atom in inhomogeneous systems . these effects perturb the collective interference that is at the heart of the read - out process . the main goal of our present work is the characterization of the collective atomic excitation that is created by the emission and detection of the stokes photon , with a focus on _ spectral _ aspects due to near - resonant write excitation and inhomogeneous broadening . spatial effects have previously been analyzed in detail in ref . @xcite , and propagation effects for the anti - stokes photon in ref . this paper is organized as follows . in section ii we study spontaneous raman emission for a single atom under pulsed excitation . we show that the amplitude for detecting a stokes photon at a given time is proportional to the amplitude of the atom being in the excited state . in section iii we show how the single - atom results can be used to quantify the collectivity for an inhomogeneously broadened atomic ensemble . in section iv we give numerical examples relevant to hot atomic gases and solid - state systems . section v contains our conclusions and an outlook towards future work . +    let us first recall the well - known dynamics of a two - level system with levels @xmath2 and @xmath0 under pulsed excitation , cf . fig . [ single ] . suppose that the system starts out in @xmath0 and that it is excited by a pulse with rabi frequency @xmath23 that is detuned from resonance by @xmath24 . we focus on the case @xmath25 ( moderate pulse area ) . depending on the value of @xmath24 there are different regimes . for far off - resonance excitation , @xmath26 , the amplitude to be in @xmath2 is well approximated by @xmath27 , such that the system returns to @xmath0 after the pulse . this is called the adiabatic regime , where the system always stays in the momentary lowest - energy eigenstate of the hamiltonian , cf . the lowest curve in fig . [ single ] . for smaller values of @xmath24 the population in @xmath2 attains a maximum during the pulse and then declines , but without returning exactly to zero , cf . the intermediate curve in fig . [ single ] . finally , for resonant excitation the population in @xmath2 increases monotonously for the whole duration ( as long as one can neglect the spontaneous decay of the excited level ) , cf . the top curve in fig . [ single ] . now add a third level @xmath1 . we are interested in spontaneous emission on the @xmath5 transition . this means that we have to include a continuum of vacuum modes of the electro - magnetic field . we follow the wigner - weisskopf treatment of spontaneous emission @xcite . the relevant states are now @xmath28 , @xmath29 , where @xmath30 is the vacuum state of the field , and the set @xmath31 , where @xmath32 are a continuum of one - photon states labeled by the frequency @xmath33 . for simplicity , and motivated by typical experiments , we focus on one specific direction of emission , treating the effect of the other modes globally as a contribution to the decay of the excited level @xmath2 ; note that @xmath2 can moreover also decay on the @xmath17 transition .    denoting the amplitudes of the states @xmath28 , @xmath29 and @xmath31 by @xmath34 , @xmath35 and @xmath36 respectively , and the overall decay rate of @xmath2 by @xmath37 , the dynamical equations are @xmath38 the coupling constant @xmath0 depends on the dipole moment of the @xmath5 transition , but also on the quantization volume and on the solid angle of the mode under consideration . its precise form is not important for our purposes here , cf . the solution of eq . ( [ dynamics ] ) is @xmath39 inserting this into eq . ( 3 ) gives @xmath40 changing the order of summation and integration in the last term , and making a wigner - weisskopf type approximation , @xmath41 we see that the modes under consideration just make a contribution to the overall decay term @xmath42 , as was to be expected . the relative size of this contribution depends on the solid angle of the considered mode ( and also on the branching ratio between the @xmath17 and @xmath5 transitions ) . it is essentially negligible in typical experimental situations where the solid angle of collection is small . more interesting for our purposes is the effect of the detection of a stokes photon at time @xmath43 . since the annihilation operator for the mode under consideration satisfies @xmath44 ( in the schrdinger picture ) , the amplitude for such a detection is @xmath45 where the equality follows from eq . ( [ gammaomega ] ) and the proportionality from eq . ( [ ww ] ) . this shows that the amplitude for detecting a stokes photon is simply proportional to the amplitude of the atom being in the excited state . below we will show that , as a consequence , the ( numerical ) solution of the two - level problem gives us all the information we need in order to study the collective interference . for a single atom , the atomic state conditional on detecting a stokes photon is simply @xmath46 in the single - atom case . it is more interesting in the @xmath3-atom case below . we now consider the situation where the laser pulse excites an ensemble of @xmath3 atoms , which do not all have the same resonance frequency . without the third level @xmath1 one would have a time - dependent state @xmath47 we are interested in the case where there is a third level , but where the spontaneous emission of a photon on the @xmath5 transition into the considered directional mode occurs with only a small probability . we then take into account only terms that correspond to a single emission . detection of a single stokes photon at time @xmath43 creates a conditional state proportional to @xmath48 where for simplicity we again assume @xmath14 ( no phase factors ) . the key point is that the coefficients @xmath49 in eq . ( [ nstate ] ) are given by the single - atom calculation described in the previous section . ( [ cpropbeta ] ) shows that @xmath49 is in fact proportional to @xmath50 , which depends on the detuning of the corresponding ( @xmath8-th ) atom with respect to the laser . the collective atomic state is thus proportional to @xmath51    after the detection of the considered stokes photon the states @xmath52 will continue to evolve , and further photons will be emitted into other directional modes ( let us recall that we are interested in the regime where the probability to emit another stokes photon into the same mode is small ) . however , in the readout process the corresponding atomic excitations in @xmath1 will just lead to the emission of additional anti - stokes photons in other , undetected directions . as long as the total number of excitations created in @xmath1 is much smaller than the total number of atoms @xmath3 , this has no significant effect on the collective interference in the readout process .    neglecting the additional excitations in @xmath1 discussed in the previous paragraph , the starting state for the readout is given by @xmath53 where @xmath54 is the time when the stokes photon was detected , whereas @xmath55 is the memory time , i.e. the time when the excitation is read out , which may be much larger than @xmath54 . for long enough @xmath55 , depending on the lifetime of @xmath2 , all the states @xmath56 will essentially be equal to @xmath57 . the state of the atomic excitation in @xmath1 is then proportional to @xmath58 we define the _ collectivity _ @xmath59 , which is a function of the time of emission of the stokes photon @xmath54 , as the fidelity of the ( normalized ) state of eq . ( [ real ] ) with respect to the ideal state of eq . ( [ ideal ] ) . +    we will now consider concrete examples . it is convenient to approximate the distribution of frequencies of the @xmath3 atoms by a continuous spectral distribution @xmath60 with @xmath61 . we will assume a gaussian distribution with fwhm @xmath62 for simplicity . we denote by @xmath63 the detuning of the laser with respect to the center of the atomic distribution , see fig . [ delta0sigma ] . the collectivity is then defined as latexmath:[\[c(t_s)=\frac{|\int d\delta n(\delta ) \beta(t_s,\delta)|^2}{n \int d\delta n(\delta )    emission of the stokes photon as before . the relevant times are therefore those where stokes photon emission is likely . as we have seen before , the stokes emission probability for an atom with detuning @xmath24 at time @xmath43 is proportional to the population in the excited state , @xmath65 . let us recall that the total emission probability for the stokes photon can be obtained by summing this quantity over all atoms ( there is no collective interference for the stokes photon emission ) . it is thus of interest to consider the average excited state population @xmath66 is significant .    for the inhomogeneous broadening we choose @xmath67 ghz , which is a realistic value both for hot gases @xcite and for rare - earth doped crystals @xcite . we furthermore choose @xmath23 to have gaussian temporal shape with a fwhm pulse duration of 0.1 @xmath68s , centered at @xmath69s in the figures , and with a maximum rabi frequency of 1 mhz ( corresponding to @xmath70 ) , a choice that is again motivated both by existing hot gas experiments and by potential future experiments on rare - earth doped solids .     +     +     +    figs . [ pe ] and [ c ] show @xmath71 and @xmath72 respectively , for different values of @xmath63 . one sees the transition from the far - detuned ( adiabatic ) regime , where the population follows the rabi pulse and the collectivity is high for emission times during the duration of the pulse , to the resonant regime , where the population no longer follows the pulse and the collectivity is low . the solid lines in the figures correspond to the case @xmath73 ( negligible atomic decay ) , which is realistic for rare - earth doped solids , where typical excited state lifetimes are of order 100 @xmath68s to 10 ms @xcite . the dashed lines correspond to @xmath74 mhz , which is a typical value for hot gases . one sees that the collectivity is very similar in both cases , but it stays high a little longer after the pulse in the case with spontaneous decay . intuitively , the decay of the collectivity after the pulse is due to the fact that stokes emission for these times is dominated by non - adiabatic contributions ( fluorescence ) @xcite . the spontaneous decay suppresses these contributions compared to the adiabatic ones ( raman scattering ) and thus enhances the collectivity . for very early times ( @xmath75 ) there are oscillations in the collectivity which we ascribe to a beating between fluorescence and raman scattering . however , the stokes photon emission probability for these times is exceedingly low , cf . [ pe ] .    in the absence of other effects the collectivity of a given atomic excitation in @xmath1 would remain unchanged once the excitation has been created via the emission of the stokes photon . in practice it will decay on a timescale given by the spin coherence time characterizing the atomic ensemble , which can be very long for solid - state ensembles @xcite . the spin transition @xmath76 can also be inhomogeneously broadened in these systems , however the associated dephasing can be compensated using spin echo techniques , which have already allowed the demonstration of coherence times as long as 30 seconds @xcite . in the case of hot gases the storage time is also limited by the motion of the atoms @xcite . [ nbeta2 ] shows the quantity @xmath77s , i.e. at the center of the pulse . this permits one to see which frequency classes of atoms contribute significantly to the stokes emission , and thus to the collective atomic excitation in @xmath1 that is created , for the different values of @xmath63 . one sees that for small @xmath63 only the atoms that are resonant with the laser contribute significantly . on the other hand for large @xmath63 the broad contribution from the bulk of the atomic distribution becomes much more important than that of the resonant atoms ( because there are so few of the latter ) . this is consistent with the results for the collectivity shown in fig . [ c ] . intuitively , the sharp feature on resonance corresponds to fluorescence , whereas the broad off - resonant contribution corresponds to raman scattering @xcite . we showed how one can quantify the collectivity of atomic excitations created by spontaneous raman emission in inhomogeneous ensembles , based essentially on simple calculations for a two - level system in combination with suitable averages over the inhomogeneous atomic spectral distribution . we found that quite moderate detuning ( of the order of twice the inhomogeneous broadening ) is already enough to be in the regime of high collectivity , where collective interference effects are as strong as in homogeneous systems . this is encouraging for future experiments in solid - state systems . it is worth mentioning that these results are in good correspondence with the conditions used in practice in hot gas experiments @xcite . of course the precise shape ( not just the width ) of the atomic distribution has to be taken into account for any given experiment . note that we have assumed that the inhomogeneous distribution is static , which is an excellent approximation for solid - state atomic ensembles . in hot gases collisions cause frequency changes , which become particularly important for longer write pulses .    in this paper we have focused on the creation of an atomic excitation in @xmath1 , i.e. the write process of the dlcz protocol . the readout is a priori more complicated because the anti - stokes emission exhibits collective interference ( and thus seems to be less amenable to a single - atom based treatment ) , and because the anti - stokes photon can be reabsorbed by the ensemble , in contrast to the stokes photon which couples to an essentially unpopulated transition . however it should be possible to extend the present approach to a detailed study of the readout as well . the simplest case is a short , intense @xmath78 read pulse that excites all atoms from @xmath1 to @xmath2 simultaneously , as described in the introduction . once the excitation has thus been transferred to the excited state @xmath2 , the problem is equivalent to the two - level situation studied e.g. in refs . @xcite and should thus be solvable using the same techniques based on the maxwell - bloch equations for inhomogeneous systems . note that efficient readout of excitations in @xmath2 is possible in inhomogeneous , absorbing systems even in the absence of control beams , if appropriate phase matching conditions are fulfilled @xcite . these calculations are typically done in a one - dimensional approximation , which should well describe situations where write and read pulse , stokes photon and anti - stokes photon all propagate along the same axis ( in forward or backward direction ) . however , it may also be possible to extend the three - dimensional descriptions of refs . @xcite to the inhomogeneous case .    in practice , short @xmath78 pulses can be hard to implement due to laser power limitations and due to the risk of inducing unwanted transitions to nearby levels . it is therefore of great interest to investigate alternative readout schemes using chirped pulses . this requires a detailed study of the impact of such excitation schemes on the phases in the collective excitation . eit effects during the read pulse may also play a role in such a scenario @xcite . eit in inhomogeneous systems has been studied e.g. in refs . @xcite . let us finally note that inhomogeneous broadening can also have desirable effects . in the context of quantum memory protocols it should allow the efficient implementation of temporal multiplexing @xcite . such `` multi - mode memories '' promise great speedups in the context of quantum repeater protocols @xcite . it is a fascinating question whether a similar enhancement is possible for the dlcz protocol . we thank p. sekatski for useful comments . this work was supported by the eu through the integrated project _ qubit applications _ and the swiss national foundation through the nccr _ quantum photonics_. c.o . was furthermore supported by the spanish ministerio de educacin y ciencia ( juan de la cierva ) . 99 h .- j . briegel , w. dr , j. i. cirac , and p. zoller , phys . lett .  * 81 * , 5932 ( 1998 ) . m.duan , m.d . lukin , j.i . cirac , and p. zoller , nature * 414 * , 413 ( 2001 ) . l. jiang , j.m . taylor , and m.d . lukin , phys . a * 76 * , 012301 ( 2007 ) . et al . _ , lett . * 98 * , 240502 ( 2007 ) z .- b . et al . _ , a * 76 * , 022329 ( 2007 ) . n. sangouard _ et al . _ , phys . a * 77 * , 062301 ( 2008 ) . j. laurat _ et al . _ , express * 14 * , 6912 ( 2006 ) . j. simon , h. tanji , j.k . thompson , and v. vuleti , phys . lett . * 98 * , 183601 ( 2007 ) . scully and m.s . zubairy , science * 301 * , 181 ( 2003 ) . m.duan , j.i.cirac , and p.zoller , phys . a * 66 * , 023818 ( 2002 ) . p. kolchin , phys . a * 75 * , 033814 ( 2007 ) . e. courtens and a. szke , phys . a * 15 * , 1588 ( 1977 ) . in homogeneous systems the collectivity is not affected by excitation close to resonance . however , the excitation has to be sufficiently weak in order to avoid the emission of multiple stokes photons into the same spatial mode . van der wal _ _ , science * 301 * , 196 ( 2003 ) . et al . _ , lett . * 93 * , 233602 ( 2004 ) . _ , nature * 438 * , 837 ( 2005 ) . s. manz , t. fernholz , j. schmiedmayer , and j .- w . pan , phys . a * 75 * , 040101(r ) ( 2007 ) . see e.g. a. kuzmich _ _ , nature * 423 * , 731 ( 2003 ) ; b. zhao _ et al . _ , nature physics * 5 * , 95 ( 2009 ) ; r. zhao _ _ , nature physics * 5 * , 100 ( 2009 ) . of spie * 6780 * , 67800k ( 2007 ) . longdell , e. fraval , m.j . sellars , and n.b . manson , phys . rev . lett . * 95 * , 063601 ( 2005 ) . h. de riedmatten _ et al . _ , nature * 456 * , 773 ( 2008 ) . m. afzelius , c. simon , h. de riedmatten , and n. gisin , arxiv:0805.4164 ( 2008 ) . alexander , j.j . longdell , m.j . sellars , and n.b . manson , phys . * 96 * , 043602 ( 2006 ) ; g. htet _ 100 * , 023601 ( 2008 ) . scully and m.s . zubairy , _ quantum optics _ ( cambridge university press , cambridge , 1997 ) , chapter 6 . et al . _ , lett . * 82 * , 5229 ( 1999 ) . macfarlane , journal of luminescence * 100 * , 1 ( 2002 ) . e. fraval , m.j . sellars , and j.j . longdell , phys . 95 * , 030506 ( 2005 ) . n. sangouard , c. simon , m. afzelius , and n. gisin , phys . a * 75 * , 032327 ( 2007 ) . srensen and a.s . srensen , phys . a * 77 * , 013826 ( 2008 ) . e. kuznetsova , o. kocharovskaya , p. hemmer , and m.o . scully , phys . a * 66 * , 063802 ( 2002 ) . gorshkov , a. andr , m.d . lukin , and a.s . srensen , phys . a * 76 * , 033806 ( 2007 ) . c. simon _ et al . _ , phys . rev . * 98 * , 190503 ( 2007 ) .
Abstract:

Answer: the creation of single collective excitations in atomic ensembles via spontaneous raman emission plays a key role in several quantum communication protocols , starting with the seminal dlcz protocol [ l .- m.duan , m.d . lukin , j.i . cirac , and p. zoller , nature * 414 * , 413 ( 2001 ) . ] this process is usually analyzed theoretically under the assumptions that the write laser pulse inducing the raman transition is far off - resonance , and that the atomic ensemble is only homogeneously broadened . here we study the impact of near - resonance excitation for inhomogeneously broadened ensembles on the collective character of the created atomic excitation . our results are particularly relevant for experiments with hot atomic gases and for potential future solid - state implementations .


Instruction: Write an abstract for the following acadamic paper.

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Paper: we have recorded the flight of a fly during take off and landing using digital high speed photography . it is shown that the dynamics of flexible wings are different for these procedures . during this observation fly flew freely in a big box and it was not tethered .
Abstract: in this fluid dynamics video , we demonstrated take off and landing of a fly . the deformation of wings is in focus in this video .

Paper: the interplay of mechanical motion and electronic properties has been studied widely in molecular physics and , recently , in molecular electronics and nanomechanical structures . present - day experimental methods enable the fabrication of nanostructures such as single - molecule junctions or quantum dots where a small number of electrons couple to one or more vibrational modes . electronic transport in these systems exhibits vibrational sidebands at high bias voltages,@xcite the shuttle instability,@xcite and the franck - condon suppression of the low - bias electric conductance.@xcite the shuttle phenomenon arises from modifications in the spatial conformation driven by the charging events , whereas the franck - condon effects emerge from the transition rates between discrete vibronic states . an additional important consequence of vibrational degrees of freedom is the polaron shift which renormalizes the coulomb repulsion of confined electrons and modifies the coulomb blockade physics of the system . at sufficiently strong couplings the sign of the effective charging energy @xmath0 can become negative implying an effectively attractive interaction between electrons.@xcite the regime of a negative effective charging energy is known to be realized in certain molecules ( an effect known in chemistry as potential inversion).@xcite it may also be accessible in vibrating quantum dots when the electron - vibron coupling is sufficiently strong . it has been shown recently that the negative @xmath0 regime opens the possibility for novel features such as an efficient electron pair tunneling through single molecules @xcite and a charge - kondo effect.@xcite an underlying assumption of these works is that the negative charging energy does not induce an instability of the system . this is indeed the case when the energy gain due to the effectively attractive charging energy is smaller than the cost in single - particle energy due to the finite level spacing , when adding ( removing ) electrons to ( from ) the dot . this paper is devoted to study the opposite regime where the magnitude of the negative ( renormalized ) charging energy exceeds the single - particle level spacing . the studied system is modeled as a single - electron transistor ( set ) whose center island is coupled to a mechanical vibration.@xcite it is shown that the system becomes unstable towards addition or extraction of electrons . assuming that the vibron hamiltonian contains an anharmonic contribution we show that the instability is regularized and that the system possesses a well defined ground state . the effective charging energy as a function of the electron number in the dot has a double - well structure which , moreover , depends on temperature . this is in striking contrast to the usual parabolic charging energy and leads to a variety of novel effects . at zero gate charge and low temperatures , there is a symmetry between particle and hole - like excitations causing the existence of degenerate minima of the effective charging energy which for weak anharmonicity are separated by a large number of electrons . the average population and the electron number fluctuations are highly sensitive to the gate voltage which breaks the symmetry between the minima . we also show that the transport properties of the system exhibit a number of distinctive features attributed to the unusual form of the effective charging energy . this paper is organized as follows . in sec . [ model ] we introduce the model , demonstrate the origin of the negative-@xmath0 instability , and state the precise conditions under which it takes place . in sec . [ anharmonic ] we explore the equilibrium properties of the instability , including the effects of the vibron nonlinearity . nonequilibrium ( transport ) properties in the presence of a bias voltage are discussed in sec . [ transport ] . we conclude in sec . [ conclusions ] . and @xmath1 model high resistance tunnel junctions which allow the island to exchange electrons with the reservoirs , @xmath2 represents a gate capacitance . the central part is coupled to a vibrational mode . ] we are considering a quantum dot or a single - molecule junction coupled to a single vibrational degree of freedom . the dot is modeled as a set where the number of electrons on the island couples to a vibron mode , see fig . [ abb_1 ] . the system could be realized , for example , by a suspended center element between large metallic leads enabling tunneling between the dot and the leads . the electronic part of the hamiltonian for a set is @xmath3 where the first term represents the single - particle energies of the leads and the center part , the second term describes tunneling between the leads and the center , and the last term is the relevant charging energy of the system . the tunneling hamiltonian and the charging energy take the standard forms @xmath4 and @xmath5 respectively . here , @xmath6 is the number of extra electrons on the island , @xmath7 , and @xmath8 is the total induced gate charge . the number @xmath9 corresponds to the positively charged lattice ions on the central island . the full hamiltonian of the system @xmath10 also includes the vibrational contribution @xmath11 where we have included the electron - vibron coupling @xmath12 with @xmath13 into the phonon hamiltonian . the hamiltonian ( [ pham ] ) also includes an anharmonic @xmath14 term whose strength is controlled by the parameter @xmath15 . the anharmonic term becomes comparable to harmonic effects when the phonon displacement is of the order of @xmath16 times the oscillator length @xmath17 . the inclusion of this term , even in the weakly nonlinear case @xmath18 , is crucial for the stability of the system for large couplings @xmath19 . to demonstrate this let us first assume @xmath20 and examine the phonon - induced modification of the charging energy . since the electron number couples linearly to the phonon position , it is possible to introduce a shifted phonon coordinate by completing the square in the phonon hamiltonian . as a result one eliminates the coupling term and generates an extra term @xmath21 quadratic in @xmath22 which can be thought of as a modification of the charging energy @xmath23 it is important to recognize that the well - known polaron shift @xmath21 gives rise to a _ negative _ contribution . the overall prefactor of the @xmath24-term will be negative if @xmath25 meaning that the effective potential favors large absolute values of @xmath22 . defining the quantity @xmath26 , the negative charging energy condition ( [ neg ] ) takes the form @xmath27 consequently , in metallic quantum dots with a vanishingly small single - particle level separation , the energy can always be lowered by adding or removing an arbitrary number of particles when condition ( [ cond1 ] ) holds . thus the system does not possess a ground state and is unstable . in dots whose orbital energies due to confinement are not negligible compared to the charging and vibron energies , the single - particle energy cost should also be taken into account . to analyze this , we introduce equidistant single - electron orbitals @xmath28 where @xmath29 is the fermi velocity of the dot , @xmath30 is the effective size of the electronic confinement and @xmath31 is the level separation . expression ( [ singorb ] ) is appropriate in the vicinity of the fermi energy and holds exactly for a one - dimensional dirac spectrum . the energy cost of adding or removing @xmath22 electrons to or from the lowest available orbitals ( ignoring the spin degeneracy ) is @xmath32 adding the single - particle contribution to the effective potential ( [ epot ] ) we get @xmath33 where the second line follows by shifting the gate charge @xmath34 . the constant in eq . ( [ epotmod1 ] ) is independent of @xmath22 and can be dropped . thus the functional form of the effective potential remains invariant , and the finite level separation just renormalizes charging energy and gate charge . the system is still fundamentally unstable provided that @xmath35 in the spin - degenerate case @xmath36 should be replaced by @xmath37 . alternatively , we can write this condition as @xmath38 , i.e. , we find an instability when the magnitude of the renormalized charging energy becomes larger than the level spacing . result ( [ cond2 ] ) shows that a constant ( or decreasing ) level spacing is not adequate to stabilize the system at sufficiently large couplings . the instability tends to change the electron number by increasing the displacement of the phonon mode . therefore it is natural to assume that at some point when the displacement becomes large the harmonic approximation for the vibron mode breaks down and anharmonic effects become significant . it turns out that a generalization of the above analysis to include a nonzero anharmonic term ( @xmath39 ) in eq . ( [ pham ] ) always produces a well - defined ground state . the effective potential for electrons becomes temperature dependent and exhibits a variety of novel features . our discussion has a close relation to familiar stability conditions in fermi - liquid theory.@xcite in fact , it is well known that the fermi liquid remains stable even when the landau interaction parameter @xmath40 becomes negative as long as @xmath41 . since @xmath40 measures the interaction strength in units of the density of states , this is a precise analog of the stability condition ( [ cond2 ] ) expressed as @xmath42 . corresponds to @xmath40 apart the difference of factor two which can be readily traced to trivial differences in definitions . ] [ anharmonic ]      in this section we study effects of the anharmonic phonon term on the negative-@xmath0 instability , focusing on thermal equilibrium properties of the junction . diagonalizing ( [ pham ] ) one obtains phonon eigenvalues @xmath43 as a function of the electron number @xmath22 and the island partition function becomes . a nonzero @xmath36 can be readily included by a simple renormalization of @xmath44 and @xmath45 . ] @xmath46\right\ } \nonumber \\ & = & \sum_{n}\mathrm{exp}\left\{-\beta u(n ) \right\ } \sum_{j}\mathrm{exp}\left\{-\beta e_j(n)\right\}. \label{part}\end{aligned}\ ] ] in eq . ( [ part ] ) we have assumed that the electron tunneling is weak and its contribution to the partition function is negligible compared to the charging energy . @xcite defining a phonon partition function as @xmath47 , the partition function takes the form @xmath48\right\}.\end{aligned}\ ] ] from expression @xmath49 one can identify the effective electronic potential @xmath50.\ ] ] in the absence of the electron - phonon interaction , eq . ( [ effpot ] ) reduces to the ordinary charging energy , and in the absence of the anharmonic term @xmath51 it is temperature independent and coincides with expression ( [ epot ] ) . in the anharmonic case the polaron shift depends on the phonon state and thus the effective potential depends on the phonon temperature . in general , an evaluation of eq . ( [ effpot ] ) requires one to diagonalize ( [ pham ] ) numerically and to compute the phonon partition function . the behavior of the system is then determined by the relative strength of the energy scales @xmath44 , @xmath52 , @xmath53 , and the magnitude of dimensionless electron - phonon coupling @xmath19 . analytical expressions for the effective potential can be obtained for weakly unstable systems at zero temperature when considering the vibronic degree of freedom as classical . as this already illustrates some of the essential physics , we first consider this case before presenting more general numerical results for the fully quantum mechanical model .    starting with eq . ( [ effpot ] ) , we can write the effective potential at zero temperature as @xmath54 where @xmath55 denotes the ground state energy of the phonon hamiltonian @xmath56 for excess charge @xmath22 . in the classical limit , the ground state energy is simply given by the minimum of the potential energy . noting that @xmath57 vanishes , we obtain @xmath58 for a weakly unstable system near zero gate charge , we expect that the effective potential has a minimum for small ( but nonzero ) @xmath22 . thus , we can neglect the quartic term when determining the position of the minimum in eq . ( [ effpotmin ] ) , @xmath59 it is straightforward to include corrections to this expression and find that this approximation is valid as long as @xmath60 , i.e. , as long as the instability is only weakly developed . with this expression for @xmath61 , we find for the effective potential @xmath62 focusing on the case of zero gate charge , we can now compute the number of electrons @xmath9 which are entering the quantum dot as a consequence of the instability . minimizing the effective potential in eq . ( [ effpotcl ] ) , we find @xmath63 note that there are indeed degenerate minima at @xmath64 for zero gate charge . once the instability develops , we can define an effective charging energy @xmath65 which decribes the curvature of the effective potential in the vicinity of the minima . expanding eq . ( [ effpotcl ] ) around the minima , we find @xmath66 this sign reversal of the effective charging energy induced by the instability has important consequences . while a negative renormalized charging energy leads to pair tunneling in the absence of the instability,@xcite the positive effective charging energy @xmath65 implies that transport will be dominated again by single electron sequential tunneling processes once the instability develops . it is also interesting to note that the coulomb blockade is significantly weakened near the instability where many charge states have similar energies . we close this section with a remark on the validity of the classical approximation for the vibrons employed in this section . as can be readily seen from eq . ( [ effpotzero ] ) , the quantum - mechanical zero - point energy of the vibron mode cancels out from this expression as long as the vibron remains harmonic , implying that the zero - point energy is independent of the electron number @xmath22 . thus , quantum corrections to our classical discussion are proportional to the anharmonicity and our classical expressions are an excellent approximation to the results of a fully quantum mechanical calculation as long as the anharmonicity remains small ( see sec . [ numerical ] for a comparison with numerical results ) .    , @xmath67 , @xmath68 , @xmath69 and from bottom to top @xmath70 . right : the effective potential corresponding to different charging energies , @xmath71 , @xmath72 , @xmath73 , @xmath69 , and from bottom to top @xmath74 . ] a solution of the full quantum problem for arbitrary parameter values requires a numerical approach . we now focus on the results of such a calculation . figure [ morepot ] illustrates the dependence of the effective potential on the electron - phonon coupling strength and the charging energy . as the coupling strength is increased the system exhibits a crossover between the @xmath75 regime and the negative-@xmath0 regime @xmath76 , signalled by the formation of a double - well structure . decreasing the ( bare coulomb ) charging energy results in qualitatively similar behavior as increasing the coupling strength . , @xmath71 , @xmath72 , @xmath69 at @xmath77 ( from bottom to top ) . right : the same as the left figure but at finite gate charge @xmath78 . ]    , @xmath71 , @xmath69 , @xmath79 and @xmath80 ( blue ) , @xmath81 ( green ) , @xmath82 ( yellow ) . the dotted lines correspond to the classical approximation obtained by minimizing the phonon potential energy . right : electron number corresponding to the minimum of the right potential well as a function of the nonlinearity , @xmath68 , @xmath72 , @xmath69 and @xmath73 ( solid ) , @xmath83 ( dashed ) , @xmath84 ( dotted ) and @xmath85 ( dash - dotted ) . ] figure [ efftemp ] shows the temperature dependence of a typical effective charging curve @xmath86 in the negative-@xmath0 regime @xmath76 . at low temperatures the potential exhibits a double - well structure whose details depend on the particular parameter values . the shape of the potential can also change qualitatively as the temperature is increased : the double well structure present in fig . [ efftemp ] is eventually deformed to a single - well potential . the temperature dependence of the potential is a consequence of the nonlinear phonon interaction . in the asymmetric case ( i.e. , at nonzero gate charge @xmath87 ) there exists a metastable energy minimum whose decay towards the global minimum requires multiple electron tunneling ( roughly 10 electrons for the parameter values ) . figure [ q_vs_cl ] ( left ) shows a comparison between the full quantum mechanical solution obtained numerically and the classical result obtained in se .  [ analytical ] . as argued above , we find that the classical approximation is quite accurate for small anharmonicity . the wells are closer at stronger anharmonicity and higher temperature , as indicated by fig . [ q_vs_cl ] ( right ) .    , @xmath71 , @xmath68 and from bottom to top @xmath88 and @xmath89 . at vanishing coupling ( @xmath90 ) we recover the usual coulomb steps , in the strong coupling we have a rapid increase at low gate voltages . the right figure clarifies the small gate charge region for couplings @xmath91 ( from bottom to top ) . ]    the average number of electrons as function of the gate charge is presented in fig .  [ ngates ] . in the absence of the electron - phonon coupling and at low temperatures , the average number @xmath92 exhibits the usual coulomb staircase behavior . as the coupling is increased , this is gradually transformed into a new dependence reflecting the double - well nature of the effective potential . the double - well structure leads to a rapid increase of the population at low gate charges . the reason for this is that the gate acts as a symmetry breaking field and the values @xmath93 are sufficient for the system to prefer one of the two nearly degenerate wells . this physics is also clearly reflected in the average number @xmath92 as function of temperature , as shown for various gate charges in fig . [ ntemps ] . for finite positive gate charge the zero temperature average value corresponds to the minimum of the right well . as the gate charge increases , the position of the minimum shifts and electrons are added to the dot in discrete jumps of one electron . at higher temperatures , the system is no longer trapped in the right well so that the average number of electrons decreases rapidly . however , the average number saturates at a finite value at high temperatures , reflecting the gate - induced asymmetry of the potential .    , @xmath67 , @xmath94 and from bottom to top @xmath95 and @xmath96 . the right figure clarifies the low - temperature region . ]    , @xmath71 , @xmath72 and from bottom to top @xmath97 . at vanishing gate the low - temperature fluctuations saturate at finite value , otherwise they will go to zero . the right figure clarifies the low - temperature region . ] charge fluctuations also exhibit interesting behavior . in the absence of the electron - phonon interaction the electronic potential is @xmath98 , so the mean square number fluctuation @xmath99 is proportional to temperature , @xmath100 . the situation is very different when the electrons couple to an anharmonic vibron mode . first of all , the zero - temperature number fluctuations do not vanish at zero gate charge , @xmath69 , but saturate to a finite value , see fig . [ n2temps ] . this happens because there exist symmetric minima on both sides of the origin . the curve also exhibits a weak dip at finite temperatures since charge fluctuates more frequently towards values smaller than the charge at the minima . eventually fluctuations grow due to the population of higher energy states . at finite gate values @xmath87 the fluctuations are drastically modified at low temperatures . the symmetry between the minima is broken and only states close to the preferred minimum are populated . when there is a single global minimum , the fluctuations vanish at zero temperature . at finite gate charge the curves approach to the zero gate curve at finite temperatures . at small gate charges , even a weak thermal excitation is sufficient to restore an approximate symmetry between the minima , leading to a sharp increase of the fluctuations from zero to the symmetric value at @xmath69 . so far we have explored consequences of the negative-@xmath0 and the anharmonic phonon effects on equilibrium properties . in this section we focus on nonequilibrium characteristics of the system in the negative-@xmath0 regime . to simplify the analysis we assume a continuous density of states of the dot and that the energy scales separate @xmath101 so that only the lowest vibrational state @xmath102 is relevant at low temperatures and bias voltages . as implied by considerations in section [ negative ] and the estimate for the effective charging energy eq . ( [ curvature ] ) , close to the instability the curvature of the potential is weak and one expects the sequential tunneling processes to dominate the transport . in the lowest order of the tunneling coupling transport properties are described by a rate equation with golden - rule transition rates.@xcite rates for the processes in which the initial dot state contains @xmath22 electrons and where the electron number changes by one due to the tunneling through the left / right junction are @xmath103 where @xmath104 , @xmath105 and @xmath106 . in the positive-@xmath0 regime in the absence of the anharmonic term the matrix element @xmath107 leads to the usual franck - condon suppression of the conductance given by @xmath108 . the probability @xmath109 of having @xmath22 extra electrons on the dot follows from the detailed balance condition @xmath110 , where the rates @xmath111 are given by the sum of the corresponding left and right lead rates . the stationary current through the set can then be calculated from the expression @xmath112 in fig . [ cur ] we have plotted the current as a function of the gate charge at different temperatures and bias voltages . the current is normalized to the franck - condon suppressed tunneling current @xmath113 . at temperatures @xmath114 current is a slowly varying function of the gate charge . below this temperature it gradually starts to show signatures of coulomb - like oscillations which become pronounced at low temperatures . although this is in qualitative agreement with the standard coulomb blockade results in absence of the vibron interaction there are also some essential differences . all the curves exhibit a slowly decreasing tendency and the amplitude of current oscillations grow as a function of gate charge . the strict periodicity of the usual coulomb - blockade conductance is broken by the nonlinear phonon interaction which does not leave the effective charging spectrum invariant as @xmath45 is increased by multiples of the electron charge . figure [ cur ] ( right ) shows also that , within a reasonable accuracy , the current is a linear function of the applied voltage at low bias .    , other parameters being @xmath115 , @xmath116 , @xmath117 , and @xmath118 . right : curves correspond to voltages ( from top to bottom ) @xmath119 , other parameters being @xmath115 , @xmath117 , @xmath120 , and @xmath121 . ]    , @xmath122 , @xmath117 and @xmath123 , @xmath69 at @xmath124 . right : the effective potential corresponding to the same parameters . ] it is noteworthy that the current is not completely blocked even at relatively low temperatures @xmath125 where the usual coulomb - blockade current is completely suppressed around integer gate charges . the reduction of the blockade can be qualitatively understood by considering the estimate ( [ curvature ] ) , which indicates that in the vicinity of the instability the value of the effective charging is reduced . with parameters corresponding to figs . [ cur ] and [ probab ] the minima of the double - well potential are flatter than the minima corresponding to the bare electronic potential in the absence of vibrations and , as illustrated in fig . [ probab ] , there exists two ( and at weaker nonlinearity more ) almost degenerate states in each well . transitions between these closeby states at the bottom of the wells enable current to flow below temperatures where the bare electronic energy cost would block it . the estimate for the effective charging ( [ curvature ] ) is valid only in the vicinity of the instability and by increasing @xmath126 one eventually enters deep in the negative-@xmath0 region where the curvature at the potential minimum exceeds @xmath44 . in this region the blockade is stronger than the usual coulomb blockade and one has to consider higher - order tunneling processes .    in fig . [ curnon ] we have plotted current vs. gate charge with a variable phonon nonlinearity . small changes in the strength of the nonlinearity change energy differences of the nearby states at the potential minima leading to phase shifts in the current oscillations . since the current is an even function of the gate charge it exhibits a cusp close to @xmath69 depending on the phase of the current oscillations . the most pronounced effect is achieved when the current oscillations jump by half a period at the origin . at finite temperatures the cusp is always smooth and becoming sharper when temperature decreases . the reason for the existence of the cusp is the symmetry breaking between the two minima of the effective potential at finite @xmath45 . even small gate values localize the system in one minimum leading to observable effects in the current through the structure . ( green ) , @xmath122 ( red ) , @xmath127 ( blue ) and @xmath128 ( black ) , other parameters being @xmath115 , @xmath129 , @xmath121 and @xmath130 . right : same quantities in the vicinity of @xmath69 . the curves correspond to @xmath131 ( black ) , @xmath132 ( green ) , @xmath122 ( red ) and @xmath133 ( blue ) , other parameters as in the left plot . ] in this paper , we studied effects of strong electron - phonon interaction in quantum dots with a vibrational degree of freedom . at sufficiently strong couplings the vibron - induced polaron shift overcomes the charging energy cost and the effective potential for electrons favors large charging . the instability towards an arbitrarily large electron population on the dot is regularized by the anharmonic contribution to the phonon energy . the effective potential differs qualitatively from the usual coulomb repulsion , leading to characteristic modifications of the low temperature coulomb blockade properties . signatures include a rapid change in the average and the fluctuations of the electron number as function of the gate charge in the neighborhood of @xmath69 as well as the temperature dependence of these quantities . moreover , transport properties also show a number of unique signatures that can be used to characterize the negative-@xmath0 instability and the nonlinear phonon effects . it is interesting to check whether in addition to molecules , an effectively negative @xmath0 could also be achieved in nanoelectromechanical systems . as shown by eq . ( [ cond2 ] ) , this requires an electron - vibron coupling ( as measured by @xmath134 ) which is of the same order of magnitude as the charging and the single - particle energies . it turns out that this condition rules out currently existing suspended electron beam lithography samples . at the same time , the situation is more favorable ( though still marginal ) for suspended carbon - nanotube devices , for which strong electron - vibron coupling has been observed in several recent experiments.@xcite the most likely vibron mode to cause a negative @xmath0 in this system is the radial breathing mode with frequency @xmath135 . ( here , @xmath136 denotes the velocity of propagation of acoustic phonons in graphene and @xmath137 is the circumference of the nanotube . ) the charging energy and the single - particle level spacing are of the same order ( assuming a `` fine - structure constant '' @xmath138 as appropriate for graphene ) so that in order to reach the negative @xmath0 instability , the electron - vibron coupling @xmath19 must exceed @xmath139^{1/2}$ ] for a nanotube of length @xmath140 . using @xmath141 , @xmath142 nm , and @xmath143 m , we find that the critical coupling strength is @xmath144 . unfortunately , this coupling constant is relatively poorly understood at present . however , both experiment@xcite and theoretical estimates for one possible coupling mechanism@xcite suggest that it is of the same order as @xmath145 . for the breathing mode scales as @xmath146 which means that decreasing the critical coupling strength by increasing the length of the tube does not to improve the possibility of reaching the negative-@xmath0 regime . ] while these estimates do not allow us to claim that the instability discussed in this paper could be observed in carbon - nanotube devices , they do suggest that realizing a negative @xmath0 in nanoelectromechanical systems is certainly conceivable . we are grateful to e. mariani , m. raikh and y. gefen for valuable discussions . this work was supported in part by the dfg through sfb 658 and spp 1243 as well as through dip . one of us ( fvo ) acknowledges the hospitality of the kitp at ucsb while part of this work has been performed . work in santa barbara has been supported in part by the national science foundation under grant no . phy05 - 51164 .    99 a. mitra , i. aleiner , and a. j. millis , phys . rev . b * 69 * , 245302 ( 2004 ) . s. braig and k. flensberg , phys . b * 68 * , 205324 ( 2003 ) . d. mozyrsky , m. b. hastings , and i. martin , phys . b * 73 * , 35104 ( 2006 ) . e. m. weig , r. h. blick , t. brandes , j. kirschbaum , w. wegscheider , m. bichler , and j. p. kotthaus , phys . * 92 * , 46804 ( 2004 ) . l. y. gorelik , a. isacsson , m. v. voinova , b. kasemo , r. i. shekhter , and m. jonson , phys . * 80 * , 4526 ( 1998 ) . t. novotny , a. donarini , c. flindt , and a .- jauho , phys . rev . lett . * 92 * , 248302 ( 2004 ) . f. pistolesi , phys . rev . b * 69 * , 245409 ( 2004 ) . l. m. jonsson , l. y. gorelik , r. i. shekhter , and m. jonson , nano lett . * 5 * , 1165 ( 2005 ) . j. koch and f. von oppen , phys . lett . * 94 * , 206804 ( 2005 ) j. koch , f. von oppen , and a. v. andreev , phys . b * 74 * , 205438 ( 2006 ) . r. leturcq , c stampfer , k inderbitzin , l. durrer , c. hierold , e. mariani , m. g. schultz , f. von oppen , and k. ensslin , nature phys . * 5 * , 327 , ( 2009 )    a. s. alexandrov , a. m. bratkovsky , and r. s. williams , phys . rev . b * 67 * , 075301 ( 2003 ) ; a. s. alexandrov and a. m. bratkovsky , phys . rev . b * 67 * , 235312 ( 2003 ) . p. s. cornaglia , h. ness , and d. r. grempel , phys . lett . * 93 * , 147201 ( 2004 ) ; p. s. cornaglia , d. r. grempel , and h. ness , phys . b * 71 * , 075320 ( 2005 ) ; p. s. cornaglia and d. r. grempel , phys . rev . b * 71 * , 245326 ( 2005 ) . l. arrachea and m. j. rozenberg , phys . b * 72 * , 041301(r ) ( 2005 ) . j. mravlje , a. ramsak , and t. rejec , phys . rev . b * 72 * , 121403(r ) ( 2005 ) . j. koch , m. e. raikh , and f. von oppen , phys . * 96 * , 056803 ( 2006 ) . j. koch , e. sela , y. oreg , and f. von oppen , phys . b * 75 * , 195402 ( 2007 ) . c. kraiya and d. h. evans , j. electroanal . chem . * 565 * , 29 ( 2004 ) . h. park , j. park , a. lim , e. anderson , a. alivisatos , and p. mceuen , nature ( london ) * 407 * , 57 ( 2000 ) . v. sazonova , y. yaish , h. ustunel , d. roundy , a. arias , and p. m. mceuen , nature ( london ) * 431 * , 284 ( 2004 ) . s. sapmaz , p. jarillo - herrero , y. m. blanter , c. dekker , and h. s. j. van der zant , phys . * 96 * , 26801 ( 2006 ) . a. naik , o. buu , m. d. lahaye , a. d. armour , a. a. clerk , m. p. blencowe , and k. c. schwab , nature ( london ) * 443 * , 193 ( 2006 ) . f. pistolesi and s. labarthe , phys . b * 76 * , 165317 ( 2007 ) . d. pines and p. nozires , _ the theory of quantum liquids _ ( perseus books , cambridge , massachusetts , 1999 ) . c. w. j. beenakker , phys . b * 44 * , 1646 ( 1991 ) ; b. j. leroy , s. g. lemay , j. kong , and c. dekker , nature ( london ) * 432 * , 371 ( 2004 ) . f. kuemmeth , s. ilani , d. c. ralph , p. l. mceuen , nature ( london ) * 452 * , 448 ( 2004 ) . a. k. httel , m. poot , b. witkamp , and h. s. j. van der zant , new j. phys . * 10 * , 095003 ( 2008 ) . e. mariani and f. von oppen , arxiv:0904.4653 ( submitted ) . tunneling is still important in the sense that in the equilibration process the island can change its charging state by exchanging electrons with the leads .
Abstract:

Answer: in quantum dots or molecules with vibrational degrees of freedom the electron - vibron coupling renormalizes the electronic charging energy . for sufficiently strong coupling , the renormalized charging energy can become negative . here , we discuss an instability towards adding or removing an arbitrary number of electrons when the magnitude of the renormalized charging energy exceeds the single - particle level spacing . we show that the instability is regularized by the anharmonic contribution to the vibron energy . the resulting effective charging energy as a function of the electron number has a double - well structure causing a variety of novel features in the coulomb blockade properties .